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学科主题: Materials Science
题名: Microstructure and energy-storage performance of PbO-B2O3-SiO2-ZnO glass added (Pb0.97La0.02)(Zr0.97Ti0.03)O-3 antiferroelectric thick films
作者: Hao Xihong; Wang Peng; Zhang Xuefeng; Xu Jinbao
关键词: Electronic materials ; Electrical properties ; Energy storage
刊名: MATERIALS RESEARCH BULLETIN
发表日期: 2013
DOI: 10.1016/j.materresbull.2012.10.005
卷: 48, 期:1, 页:84-88
收录类别: SCI
资助者: National Natural Science Foundation of China 51002071; Program for Young Talents of Science and Technology in Universities of Inner Mongolia Autonomous Region; Natural Science Foundation of Inner Mongolia 2010BS0802; Opening Project of Xinjiang Key Laboratory of Electronic Information Materials and Devices XJYS0901-2011-01; Innovation Fund of Inner Mongolia University of Science and Technology 2009NC007; Fund of Industry-Academia-Research Project of Inner Mongolia University of Science and Technology PY-201003
摘要: In this paper, Pb0.97La0.02(Zr0.97Ti0.03)O-3 (PUT 2/97/3) antiferroelectric (AFE) thick films with 0-5 wt.% PbO-B2O3-SiO2-ZnO glass addition were successfully fabricated on alumina substrates via a screen printing method. The effects of the added glass on the microstructure, the dielectric properties, and the energy-storage performance of the PLZT 2/97/3 AFE thick films were investigated in detail. The results showed that the proper addition of glass powders was favor to form a denser microstructure with a pure perovsike phase. As a result, the dielectric properties and the energy-storage performance of AFE thick films were greatly improved by the addition of glass. The maximum recoverable energy-storage density of 3.1 J/cm(3) was obtained in 3-wt.% glass-added AFE thick films.
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内容类型: 期刊论文
URI标识: http://ir.xjipc.cas.cn/handle/365002/2705
Appears in Collections:新疆维吾尔自治区电子信息材料与器件重点实验室_期刊论文

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作者单位: Lab Integrated Exploitat Bayan Obo Multimetal Res, Baotou 014010, Peoples R China;Inner Mongolia Univ Sci & Technol, Sch Met & Mat, Baotou 014010, Peoples R China;Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Xinjiang Key Lab Elect Informat Mat & Devices, Urumqi 830011, Peoples R China

Recommended Citation:
Hao Xihong,Wang Peng,Zhang Xuefeng,et al. Microstructure and energy-storage performance of PbO-B2O3-SiO2-ZnO glass added (Pb0.97La0.02)(Zr0.97Ti0.03)O-3 antiferroelectric thick films[J]. MATERIALS RESEARCH BULLETIN,2013,48(1):84-88.
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文件名: microstructure and energy-storage performance of pbo-b2o3-sio2-zno glass added (pb0.97la0.02)(zr0.97ti0.03)o-3 antiferroelectric thick films.pdf
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