In this paper, Pb0.97La0.02(Zr0.97Ti0.03)O-3 (PUT 2/97/3) antiferroelectric (AFE) thick films with 0-5 wt.% PbO-B2O3-SiO2-ZnO glass addition were successfully fabricated on alumina substrates via a screen printing method. The effects of the added glass on the microstructure, the dielectric properties, and the energy-storage performance of the PLZT 2/97/3 AFE thick films were investigated in detail. The results showed that the proper addition of glass powders was favor to form a denser microstructure with a pure perovsike phase. As a result, the dielectric properties and the energy-storage performance of AFE thick films were greatly improved by the addition of glass. The maximum recoverable energy-storage density of 3.1 J/cm(3) was obtained in 3-wt.% glass-added AFE thick films.