Total ionizing dose effect on 0.18 mu m narrow-channel NMOS transistors
Wu Xue; Lu Wu; Wang Xin; Xi Shan-Bin; Guo Qi; Li Yu-Dong
2013
Source PublicationACTA PHYSICA SINICA
ISSN1000-3290
Volume62Issue:13
AbstractThis paper describes the total ionizing dose effect on 0.18 mu m narrow-channel NMOS transistors which are exposed to a gamma-ray radiation. Electrical parameters such as threshold voltage, leakage current, trans-conductance, drain-source conductance, and subthreshold slope extracted from the I-V curves are analyzed pre-and post-irradiation. Results show that the threshold voltage, the trans-conductance, and the drain-source conductance are sensitive to radiation compared to wide-channel NMOS transistors-the effect we call radiation induced narrow channel effect(RINCE). The amount of oxide-trapped charges and interface states which would degrade the threshold voltage and leakage current is induced in the STI oxide. The gate oxide is insensitive to irradiation. Combining the structure and process of devices, we finally discuss and analyze the above phenomenon in detail.
Keyword0.18 Mu m Narrow-channel Nmos Transistor 60co Gamma Rince
Subject AreaPhysics
DOI10.7498/aps.62.136101
Indexed BySCI
WOS IDWOS:000322566300056
Citation statistics
Cited Times:3[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/2703
Collection新疆维吾尔自治区电子信息材料与器件重点实验室
材料物理与化学研究室
AffiliationChinese Acad Sci, Key Lab Funct Mat & Devices Special Environm, Xinjiang Tech Inst Phys & Chem, Urumq 830011, Peoples R China;Xinjiang Key Lab Elect Informat Mat & Device, Urumqi 830011, Peoples R China;Univ Chinese Acad Sci, Beijing 100049, Peoples R China
Recommended Citation
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Wu Xue,Lu Wu,Wang Xin,et al. Total ionizing dose effect on 0.18 mu m narrow-channel NMOS transistors[J]. ACTA PHYSICA SINICA,2013,62(13).
APA Wu Xue,Lu Wu,Wang Xin,Xi Shan-Bin,Guo Qi,&Li Yu-Dong.(2013).Total ionizing dose effect on 0.18 mu m narrow-channel NMOS transistors.ACTA PHYSICA SINICA,62(13).
MLA Wu Xue,et al."Total ionizing dose effect on 0.18 mu m narrow-channel NMOS transistors".ACTA PHYSICA SINICA 62.13(2013).
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