Total ionizing dose effect on 0.18 mu m narrow-channel NMOS transistors
Wu Xue; Lu Wu; Wang Xin; Xi Shan-Bin; Guo Qi; Li Yu-Dong
2013
发表期刊ACTA PHYSICA SINICA
ISSN1000-3290
卷号62期号:13
摘要This paper describes the total ionizing dose effect on 0.18 mu m narrow-channel NMOS transistors which are exposed to a gamma-ray radiation. Electrical parameters such as threshold voltage, leakage current, trans-conductance, drain-source conductance, and subthreshold slope extracted from the I-V curves are analyzed pre-and post-irradiation. Results show that the threshold voltage, the trans-conductance, and the drain-source conductance are sensitive to radiation compared to wide-channel NMOS transistors-the effect we call radiation induced narrow channel effect(RINCE). The amount of oxide-trapped charges and interface states which would degrade the threshold voltage and leakage current is induced in the STI oxide. The gate oxide is insensitive to irradiation. Combining the structure and process of devices, we finally discuss and analyze the above phenomenon in detail.
关键词0.18 Mu m Narrow-channel Nmos Transistor 60co Gamma Rince
学科领域Physics
DOI10.7498/aps.62.136101
收录类别SCI
WOS记录号WOS:000322566300056
引用统计
文献类型期刊论文
条目标识符http://ir.xjipc.cas.cn/handle/365002/2703
专题新疆维吾尔自治区电子信息材料与器件重点实验室
作者单位Chinese Acad Sci, Key Lab Funct Mat & Devices Special Environm, Xinjiang Tech Inst Phys & Chem, Urumq 830011, Peoples R China;Xinjiang Key Lab Elect Informat Mat & Device, Urumqi 830011, Peoples R China;Univ Chinese Acad Sci, Beijing 100049, Peoples R China
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Wu Xue,Lu Wu,Wang Xin,et al. Total ionizing dose effect on 0.18 mu m narrow-channel NMOS transistors[J]. ACTA PHYSICA SINICA,2013,62(13).
APA Wu Xue,Lu Wu,Wang Xin,Xi Shan-Bin,Guo Qi,&Li Yu-Dong.(2013).Total ionizing dose effect on 0.18 mu m narrow-channel NMOS transistors.ACTA PHYSICA SINICA,62(13).
MLA Wu Xue,et al."Total ionizing dose effect on 0.18 mu m narrow-channel NMOS transistors".ACTA PHYSICA SINICA 62.13(2013).
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