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学科主题: Physics
题名: total ionizing dose effect on 0.18 mu m narrow-channel nmos transistors
作者: Wu Xue; Lu Wu; Wang Xin; Xi Shan-Bin; Guo Qi; Li Yu-Dong
关键词: 0.18 mu m ; narrow-channel NMOS transistor ; 60Co gamma ; RINCE
刊名: ACTA PHYSICA SINICA
发表日期: 2013
DOI: 10.7498/aps.62.136101
卷: 62, 期:13, 页:-
收录类别: SCI
资助者: Foundation of NLAIC 9140C090402110C0906
摘要: This paper describes the total ionizing dose effect on 0.18 mu m narrow-channel NMOS transistors which are exposed to a gamma-ray radiation. Electrical parameters such as threshold voltage, leakage current, trans-conductance, drain-source conductance, and subthreshold slope extracted from the I-V curves are analyzed pre-and post-irradiation. Results show that the threshold voltage, the trans-conductance, and the drain-source conductance are sensitive to radiation compared to wide-channel NMOS transistors-the effect we call radiation induced narrow channel effect(RINCE). The amount of oxide-trapped charges and interface states which would degrade the threshold voltage and leakage current is induced in the STI oxide. The gate oxide is insensitive to irradiation. Combining the structure and process of devices, we finally discuss and analyze the above phenomenon in detail.
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内容类型: 期刊论文
URI标识: http://ir.xjipc.cas.cn/handle/365002/2703
Appears in Collections:新疆维吾尔自治区电子信息材料与器件重点实验室_期刊论文

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作者单位: Chinese Acad Sci, Key Lab Funct Mat & Devices Special Environm, Xinjiang Tech Inst Phys & Chem, Urumq 830011, Peoples R China;Xinjiang Key Lab Elect Informat Mat & Device, Urumqi 830011, Peoples R China;Univ Chinese Acad Sci, Beijing 100049, Peoples R China

Recommended Citation:
Wu Xue,Lu Wu,Wang Xin,et al. total ionizing dose effect on 0.18 mu m narrow-channel nmos transistors[J]. ACTA PHYSICA SINICA,2013,62(13):-.
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文件名: total ionizing dose effect on 0.18 mu m narrow-channel nmos transistors.pdf
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