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学科主题: Physics
题名: co-60 gamma-radiation effects on the ideality factor of alxga1-xn p-i-n solar-blind detector with high content of aluminum
作者: Zhang Xiao-Fu; Li Yu-Dong; Guo Qi; Luo Mu-Chang; He Cheng-Fa; Yu Xin; Shen Zhi-Hui; Zhang Xing-Yao; Deng Wei; Wu Zheng-Xin
关键词: high Al content AlxGa1-xN ; gamma-ray radiation effects ; ideality factor ; Ohmic contact
刊名: ACTA PHYSICA SINICA
发表日期: 2013
DOI: 10.7498/aps.62.076106
卷: 62, 期:7, 页:-
收录类别: SCI
摘要: High Al content AlxGa1-xN solar-blind photodetector and Si p-i-n visible light detector were irradiated with Co-60 gamma-rays up to 0.1, 1, 10 Mrad(Si). With the increase of total radiation dose, the ideality factor of AlxGa1-xN p-i-n diode saw a significant rise and the ideality factor n is grater than 2 with a total dose up to 10 Mrad(Si); the ideality factor of Si p-i-n diode, however, changed only slightly even up to 10 Mrad(Si). The degradation of AlxGa1-xN p-i-n diode might be attributed to the deterioration of Ohmic contacts, however, to some extent, the slight increase of the Si p-i-n diode might be due to the degradation of the insensitive layer.
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内容类型: 期刊论文
URI标识: http://ir.xjipc.cas.cn/handle/365002/2701
Appears in Collections:新疆维吾尔自治区电子信息材料与器件重点实验室_期刊论文

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60Coγ射线对高铝组分Al0.5Ga0.5N基p-i-n日盲型光探测器理想因子的影响.pdf(848KB)期刊论文作者接受稿开放获取View 联系获取全文

作者单位: Univ Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China;Xinjiang Key Lab Elect Informat Mat & Devices, Urumqi 830011, Peoples R China;Chongqing Optoelect Res Inst, Chongqing 400060, Peoples R China

Recommended Citation:
Zhang Xiao-Fu,Li Yu-Dong,Guo Qi,et al. co-60 gamma-radiation effects on the ideality factor of alxga1-xn p-i-n solar-blind detector with high content of aluminum[J]. ACTA PHYSICA SINICA,2013,62(7):-.
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文件名: 60Coγ射线对高铝组分Al0.5Ga0.5N基p-i-n日盲型光探测器理想因子的影响.pdf
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