High Al content AlxGa1-xN solar-blind photodetector and Si p-i-n visible light detector were irradiated with Co-60 gamma-rays up to 0.1, 1, 10 Mrad(Si). With the increase of total radiation dose, the ideality factor of AlxGa1-xN p-i-n diode saw a significant rise and the ideality factor n is grater than 2 with a total dose up to 10 Mrad(Si); the ideality factor of Si p-i-n diode, however, changed only slightly even up to 10 Mrad(Si). The degradation of AlxGa1-xN p-i-n diode might be attributed to the deterioration of Ohmic contacts, however, to some extent, the slight increase of the Si p-i-n diode might be due to the degradation of the insensitive layer.
Univ Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China;Xinjiang Key Lab Elect Informat Mat & Devices, Urumqi 830011, Peoples R China;Chongqing Optoelect Res Inst, Chongqing 400060, Peoples R China
Zhang Xiao-Fu,Li Yu-Dong,Guo Qi,et al. co-60 gamma-radiation effects on the ideality factor of alxga1-xn p-i-n solar-blind detector with high content of aluminum[J]. ACTA PHYSICA SINICA,2013,62(7):-.