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学科主题: Physics
题名: research on sram functional failure mode induced by total ionizing dose irradiation
作者: Zheng Qi-Wen; Yu Xue-Feng; Cui Jiang-Wei; Guo Qi; Ren Di-Yuan; Cong Zhong-Chao
关键词: SRAM ; function failure ; test pattern ; data retention fault
刊名: ACTA PHYSICA SINICA
发表日期: 2013
DOI: 10.7498/aps.62.116101
卷: 62, 期:11, 页:-
收录类别: SCI
摘要: In the present paper, function test of different test pattern was used to investigate function failure of static random access memory (SRAM) induced by the total dose effect. By comparing the function test results of different test pattern and single error bit, it is shown that the failure mode of the device is data retention fault, and different storage cell had diverse data retention time, the fault module of device is the storage cell. We discussed the reason for these phenomena in detail using simple circuit model of storage cell, and also analyzed the influence of these phenomena on test method to evaluate the total dose radiation damage of SRAM.
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内容类型: 期刊论文
URI标识: http://ir.xjipc.cas.cn/handle/365002/2699
Appears in Collections:新疆维吾尔自治区电子信息材料与器件重点实验室_期刊论文

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总剂量辐射环境中的静态随机存储器功能失效模式研究.pdf(9784KB)期刊论文作者接受稿开放获取View 联系获取全文

作者单位: Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China;Xinjiang Key Lab Elect Informat Mat & Devices, Urumqi 830011, Peoples R China;Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China

Recommended Citation:
Zheng Qi-Wen,Yu Xue-Feng,Cui Jiang-Wei,et al. research on sram functional failure mode induced by total ionizing dose irradiation[J]. ACTA PHYSICA SINICA,2013,62(11):-.
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文件名: 总剂量辐射环境中的静态随机存储器功能失效模式研究.pdf
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