research on sram functional failure mode induced by total ionizing dose irradiation
Zheng Qi-Wen; Yu Xue-Feng; Cui Jiang-Wei; Guo Qi; Ren Di-Yuan; Cong Zhong-Chao
2013
发表期刊ACTA PHYSICA SINICA
ISSN1000-3290
卷号62期号:11
摘要

In the present paper, function test of different test pattern was used to investigate function failure of static random access memory (SRAM) induced by the total dose effect. By comparing the function test results of different test pattern and single error bit, it is shown that the failure mode of the device is data retention fault, and different storage cell had diverse data retention time, the fault module of device is the storage cell. We discussed the reason for these phenomena in detail using simple circuit model of storage cell, and also analyzed the influence of these phenomena on test method to evaluate the total dose radiation damage of SRAM.

关键词Sram Function Failure Test Pattern Data Retention Fault
学科领域Physics
DOI10.7498/aps.62.116101
收录类别SCI
WOS记录号WOS:000320244200051
引用统计
被引频次:2[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.xjipc.cas.cn/handle/365002/2699
专题新疆维吾尔自治区电子信息材料与器件重点实验室
作者单位Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China;Xinjiang Key Lab Elect Informat Mat & Devices, Urumqi 830011, Peoples R China;Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China
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Zheng Qi-Wen,Yu Xue-Feng,Cui Jiang-Wei,et al. research on sram functional failure mode induced by total ionizing dose irradiation[J]. ACTA PHYSICA SINICA,2013,62(11).
APA Zheng Qi-Wen,Yu Xue-Feng,Cui Jiang-Wei,Guo Qi,Ren Di-Yuan,&Cong Zhong-Chao.(2013).research on sram functional failure mode induced by total ionizing dose irradiation.ACTA PHYSICA SINICA,62(11).
MLA Zheng Qi-Wen,et al."research on sram functional failure mode induced by total ionizing dose irradiation".ACTA PHYSICA SINICA 62.11(2013).
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