research on sram functional failure mode induced by total ionizing dose irradiation
Zheng Qi-Wen; Yu Xue-Feng; Cui Jiang-Wei; Guo Qi; Ren Di-Yuan; Cong Zhong-Chao
2013
Source PublicationACTA PHYSICA SINICA
ISSN1000-3290
Volume62Issue:11
Abstract

In the present paper, function test of different test pattern was used to investigate function failure of static random access memory (SRAM) induced by the total dose effect. By comparing the function test results of different test pattern and single error bit, it is shown that the failure mode of the device is data retention fault, and different storage cell had diverse data retention time, the fault module of device is the storage cell. We discussed the reason for these phenomena in detail using simple circuit model of storage cell, and also analyzed the influence of these phenomena on test method to evaluate the total dose radiation damage of SRAM.

KeywordSram Function Failure Test Pattern Data Retention Fault
Subject AreaPhysics
DOI10.7498/aps.62.116101
Indexed BySCI
WOS IDWOS:000320244200051
Citation statistics
Cited Times:2[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/2699
Collection新疆维吾尔自治区电子信息材料与器件重点实验室
材料物理与化学研究室
AffiliationChinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China;Xinjiang Key Lab Elect Informat Mat & Devices, Urumqi 830011, Peoples R China;Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China
Recommended Citation
GB/T 7714
Zheng Qi-Wen,Yu Xue-Feng,Cui Jiang-Wei,et al. research on sram functional failure mode induced by total ionizing dose irradiation[J]. ACTA PHYSICA SINICA,2013,62(11).
APA Zheng Qi-Wen,Yu Xue-Feng,Cui Jiang-Wei,Guo Qi,Ren Di-Yuan,&Cong Zhong-Chao.(2013).research on sram functional failure mode induced by total ionizing dose irradiation.ACTA PHYSICA SINICA,62(11).
MLA Zheng Qi-Wen,et al."research on sram functional failure mode induced by total ionizing dose irradiation".ACTA PHYSICA SINICA 62.11(2013).
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