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学科主题: Physics
题名: serial ferroelectric memory ionizing radiation effects and annealing characteristics
作者: Zhang Xing-Yao; Guo Qi; Lu Wu; Zhang Xiao-Fu; Zheng Qi-Wen; Cui Jiang-Wei; Li Yu-Dong; Zhou Dong
通讯作者: Guo, Q
关键词: ferroelectric random memory ; ionizing radiation effects ; annealing characteristics
刊名: ACTA PHYSICA SINICA
发表日期: 2013
DOI: 10.7498/aps.62.156107
卷: 62, 期:15, 页:-
收录类别: SCI
摘要: Ferroelectric random memory was irradiated and annealed by Co-60 gamma-rays, total ionizing dose (TID) failure mechanism and annealing characteristics of the device were analyzed. DC, AC and function parameters of the memory were tested in radiation and annealing by very large scale integrated cicuit (VLSI) test system, the radiation-sensitive parameters were obtained through analyzing the test data. Ionizing radiation produced a large number of oxide trapped charges, leading MOS transistor threshold to the negative drift in memory peripheral control circuit. Additional electric field was introduced in the ferroelectric film, and leakage current was produced since the Schottky emission or space-charge-limited current occurred. The number of shallower levels and metastable state oxide trapped charges are more than the deep level oxide trapped charge, so that the device functions and the radiation-sensitive parameters were restored in the annealing.
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内容类型: 期刊论文
URI标识: http://ir.xjipc.cas.cn/handle/365002/2697
Appears in Collections:新疆维吾尔自治区电子信息材料与器件重点实验室_期刊论文

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串口型铁电存储器总剂量辐射损伤效应和退火特性.pdf(235KB)期刊论文作者接受稿开放获取View 联系获取全文

作者单位: Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China;Xinjiang Key Lab Elect Informat Mat & Devices, Urumqi 830011, Peoples R China;Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China

Recommended Citation:
Zhang Xing-Yao,Guo Qi,Lu Wu,et al. serial ferroelectric memory ionizing radiation effects and annealing characteristics[J]. ACTA PHYSICA SINICA,2013,62(15):-.
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文件名: 串口型铁电存储器总剂量辐射损伤效应和退火特性.pdf
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