serial ferroelectric memory ionizing radiation effects and annealing characteristics
Zhang Xing-Yao; Guo Qi; Lu Wu; Zhang Xiao-Fu; Zheng Qi-Wen; Cui Jiang-Wei; Li Yu-Dong; Zhou Dong; Guo, Q
2013
发表期刊ACTA PHYSICA SINICA
ISSN1000-3290
卷号62期号:15
摘要

Ferroelectric random memory was irradiated and annealed by Co-60 gamma-rays, total ionizing dose (TID) failure mechanism and annealing characteristics of the device were analyzed. DC, AC and function parameters of the memory were tested in radiation and annealing by very large scale integrated cicuit (VLSI) test system, the radiation-sensitive parameters were obtained through analyzing the test data. Ionizing radiation produced a large number of oxide trapped charges, leading MOS transistor threshold to the negative drift in memory peripheral control circuit. Additional electric field was introduced in the ferroelectric film, and leakage current was produced since the Schottky emission or space-charge-limited current occurred. The number of shallower levels and metastable state oxide trapped charges are more than the deep level oxide trapped charge, so that the device functions and the radiation-sensitive parameters were restored in the annealing.

关键词Ferroelectric Random Memory Ionizing Radiation Effects Annealing Characteristics
学科领域Physics
DOI10.7498/aps.62.156107
收录类别SCI
WOS记录号WOS:000323650000046
引用统计
文献类型期刊论文
条目标识符http://ir.xjipc.cas.cn/handle/365002/2697
专题新疆维吾尔自治区电子信息材料与器件重点实验室
通讯作者Guo, Q
作者单位Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China;Xinjiang Key Lab Elect Informat Mat & Devices, Urumqi 830011, Peoples R China;Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China
推荐引用方式
GB/T 7714
Zhang Xing-Yao,Guo Qi,Lu Wu,et al. serial ferroelectric memory ionizing radiation effects and annealing characteristics[J]. ACTA PHYSICA SINICA,2013,62(15).
APA Zhang Xing-Yao.,Guo Qi.,Lu Wu.,Zhang Xiao-Fu.,Zheng Qi-Wen.,...&Guo, Q.(2013).serial ferroelectric memory ionizing radiation effects and annealing characteristics.ACTA PHYSICA SINICA,62(15).
MLA Zhang Xing-Yao,et al."serial ferroelectric memory ionizing radiation effects and annealing characteristics".ACTA PHYSICA SINICA 62.15(2013).
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