serial ferroelectric memory ionizing radiation effects and annealing characteristics
Zhang Xing-Yao; Guo Qi; Lu Wu; Zhang Xiao-Fu; Zheng Qi-Wen; Cui Jiang-Wei; Li Yu-Dong; Zhou Dong
2013
Source PublicationACTA PHYSICA SINICA
ISSN1000-3290
Volume62Issue:15Pages:347-352
Abstract

Ferroelectric random memory was irradiated and annealed by Co-60 gamma-rays, total ionizing dose (TID) failure mechanism and annealing characteristics of the device were analyzed. DC, AC and function parameters of the memory were tested in radiation and annealing by very large scale integrated cicuit (VLSI) test system, the radiation-sensitive parameters were obtained through analyzing the test data. Ionizing radiation produced a large number of oxide trapped charges, leading MOS transistor threshold to the negative drift in memory peripheral control circuit. Additional electric field was introduced in the ferroelectric film, and leakage current was produced since the Schottky emission or space-charge-limited current occurred. The number of shallower levels and metastable state oxide trapped charges are more than the deep level oxide trapped charge, so that the device functions and the radiation-sensitive parameters were restored in the annealing.

KeywordFerroelectric Random Memory Ionizing Radiation Effects Annealing Characteristics
Subject AreaPhysics
DOI10.7498/aps.62.156107
Indexed BySCI
WOS IDWOS:000323650000046
Citation statistics
Cited Times:4[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/2697
Collection新疆维吾尔自治区电子信息材料与器件重点实验室
材料物理与化学研究室
Corresponding AuthorGuo Qi
AffiliationChinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China;Xinjiang Key Lab Elect Informat Mat & Devices, Urumqi 830011, Peoples R China;Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China
Recommended Citation
GB/T 7714
Zhang Xing-Yao,Guo Qi,Lu Wu,et al. serial ferroelectric memory ionizing radiation effects and annealing characteristics[J]. ACTA PHYSICA SINICA,2013,62(15):347-352.
APA Zhang Xing-Yao.,Guo Qi.,Lu Wu.,Zhang Xiao-Fu.,Zheng Qi-Wen.,...&Zhou Dong.(2013).serial ferroelectric memory ionizing radiation effects and annealing characteristics.ACTA PHYSICA SINICA,62(15),347-352.
MLA Zhang Xing-Yao,et al."serial ferroelectric memory ionizing radiation effects and annealing characteristics".ACTA PHYSICA SINICA 62.15(2013):347-352.
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