中国科学院新疆理化技术研究所机构知识库
Advanced  
XJIPC OpenIR  > 新疆维吾尔自治区电子信息材料与器件重点实验室  > 期刊论文
学科主题: Engineering ; Physics
题名: Room-Temperature Ferromagnetism in Ti-Doped AlN Film
作者: Ren Yinshuan; Pan Dong; Jian Jikang; Jiang Xiaokang; Li Jin; Sun Yanfei; Wu Rong
关键词: Radio frequency reactive sputtering ; AlN film ; Ti doping ; diluted magnetic semiconductor
刊名: INTEGRATED FERROELECTRICS
发表日期: 2013
DOI: 10.1080/10584587.2013.790185
卷: 146, 期:1, 页:154-160
收录类别: SCI
资助者: National Natural Science Foundation of China 10864004, 50862008, 11164026; China Postdoctoral Science Foundation 20100471679, 201104704; "Western Light Joint Scholar Foundation" Program of Chinese Academy of Sciences LHXZ200902
摘要: AlN film doped with 1.2 at.% Titanium (Ti) was successfully prepared on a silicon (100) substrate by radio frequency reactive sputtering. X-ray diffractometry (XRD) analysis clearly showed that the (002) peak position of the AlN:Ti film slightly shifted to higher angles compared with pure AlN, while the crystal structure of sample was maintained. The rocking curve results revealed that the deposited films have a good crystalline quality. X-ray photoelectron spectroscopes (XPS) proved that Ti atoms were successfully incorporated into AlN without forming any secondary phase. Atomic force microscopy (AFM) revealed the doped film sample possess smooth surface and homogeneous grain size with a root mean square roughness (RMS) value of 1.49nm. The magnetization versus magnetic field (M-H) curves indicated the Ti-doped AlN films exhibited room temperature ferromagnetism. The saturation magnetizations (Ms) and coercive fields (Hc) obtained at 300K were about 9.82 x 10(-6) emu and 75 Oe, respectively. The results reveal that Ti is a potential dopant for preparing diluted magnetic semiconductors film.
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.xjipc.cas.cn/handle/365002/2693
Appears in Collections:新疆维吾尔自治区电子信息材料与器件重点实验室_期刊论文

Files in This Item:
File Name/ File Size Content Type Version Access License
Room-temperature ferromagnetism in Ti-doped AlN film.pdf(353KB)期刊论文作者接受稿开放获取View 联系获取全文

作者单位: Xinjiang Univ, Dept Phys Sci & Technol, Urumqi 830046, Peoples R China;Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Xinjiang Key Lab Elect Informat Mat & Devices, Urumqi 830011, Peoples R China

Recommended Citation:
Ren Yinshuan,Pan Dong,Jian Jikang,et al. Room-Temperature Ferromagnetism in Ti-Doped AlN Film[J]. INTEGRATED FERROELECTRICS,2013,146(1):154-160.
Service
Recommend this item
Sava as my favorate item
Show this item's statistics
Export Endnote File
Google Scholar
Similar articles in Google Scholar
[Ren Yinshuan]'s Articles
[Pan Dong]'s Articles
[Jian Jikang]'s Articles
CSDL cross search
Similar articles in CSDL Cross Search
[Ren Yinshuan]‘s Articles
[Pan Dong]‘s Articles
[Jian Jikang]‘s Articles
Related Copyright Policies
Null
Social Bookmarking
Add to CiteULike Add to Connotea Add to Del.icio.us Add to Digg Add to Reddit
文件名: Room-temperature ferromagnetism in Ti-doped AlN film.pdf
格式: Adobe PDF
所有评论 (0)
暂无评论
 
评注功能仅针对注册用户开放,请您登录
您对该条目有什么异议,请填写以下表单,管理员会尽快联系您。
内 容:
Email:  *
单位:
验证码:   刷新
您在IR的使用过程中有什么好的想法或者建议可以反馈给我们。
标 题:
 *
内 容:
Email:  *
验证码:   刷新

Items in IR are protected by copyright, with all rights reserved, unless otherwise indicated.

 

 

Valid XHTML 1.0!
Powered by CSpace