Room-Temperature Ferromagnetism in Ti-Doped AlN Film
Ren Yinshuan; Pan Dong; Jian Jikang; Jiang Xiaokang; Li Jin; Sun Yanfei; Wu Rong
2013
发表期刊INTEGRATED FERROELECTRICS
ISSN1058-4587
卷号146期号:1页码:154-160
摘要

AlN film doped with 1.2 at.% Titanium (Ti) was successfully prepared on a silicon (100) substrate by radio frequency reactive sputtering. X-ray diffractometry (XRD) analysis clearly showed that the (002) peak position of the AlN:Ti film slightly shifted to higher angles compared with pure AlN, while the crystal structure of sample was maintained. The rocking curve results revealed that the deposited films have a good crystalline quality. X-ray photoelectron spectroscopes (XPS) proved that Ti atoms were successfully incorporated into AlN without forming any secondary phase. Atomic force microscopy (AFM) revealed the doped film sample possess smooth surface and homogeneous grain size with a root mean square roughness (RMS) value of 1.49nm. The magnetization versus magnetic field (M-H) curves indicated the Ti-doped AlN films exhibited room temperature ferromagnetism. The saturation magnetizations (Ms) and coercive fields (Hc) obtained at 300K were about 9.82 x 10(-6) emu and 75 Oe, respectively. The results reveal that Ti is a potential dopant for preparing diluted magnetic semiconductors film.

关键词Radio Frequency Reactive Sputtering Aln Film Ti Doping Diluted Magnetic Semiconductor
学科领域Engineering ; Physics
DOI10.1080/10584587.2013.790185
收录类别SCI
WOS记录号WOS:000321689500021
引用统计
被引频次:1[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.xjipc.cas.cn/handle/365002/2693
专题新疆维吾尔自治区电子信息材料与器件重点实验室
作者单位Xinjiang Univ, Dept Phys Sci & Technol, Urumqi 830046, Peoples R China;Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Xinjiang Key Lab Elect Informat Mat & Devices, Urumqi 830011, Peoples R China
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Ren Yinshuan,Pan Dong,Jian Jikang,et al. Room-Temperature Ferromagnetism in Ti-Doped AlN Film[J]. INTEGRATED FERROELECTRICS,2013,146(1):154-160.
APA Ren Yinshuan.,Pan Dong.,Jian Jikang.,Jiang Xiaokang.,Li Jin.,...&Wu Rong.(2013).Room-Temperature Ferromagnetism in Ti-Doped AlN Film.INTEGRATED FERROELECTRICS,146(1),154-160.
MLA Ren Yinshuan,et al."Room-Temperature Ferromagnetism in Ti-Doped AlN Film".INTEGRATED FERROELECTRICS 146.1(2013):154-160.
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