Room-Temperature Ferromagnetism in Ti-Doped AlN Film
Ren Yinshuan; Pan Dong; Jian Jikang; Jiang Xiaokang; Li Jin; Sun Yanfei; Wu Rong

AlN film doped with 1.2 at.% Titanium (Ti) was successfully prepared on a silicon (100) substrate by radio frequency reactive sputtering. X-ray diffractometry (XRD) analysis clearly showed that the (002) peak position of the AlN:Ti film slightly shifted to higher angles compared with pure AlN, while the crystal structure of sample was maintained. The rocking curve results revealed that the deposited films have a good crystalline quality. X-ray photoelectron spectroscopes (XPS) proved that Ti atoms were successfully incorporated into AlN without forming any secondary phase. Atomic force microscopy (AFM) revealed the doped film sample possess smooth surface and homogeneous grain size with a root mean square roughness (RMS) value of 1.49nm. The magnetization versus magnetic field (M-H) curves indicated the Ti-doped AlN films exhibited room temperature ferromagnetism. The saturation magnetizations (Ms) and coercive fields (Hc) obtained at 300K were about 9.82 x 10(-6) emu and 75 Oe, respectively. The results reveal that Ti is a potential dopant for preparing diluted magnetic semiconductors film.

KeywordRadio Frequency Reactive Sputtering Aln Film Ti Doping Diluted Magnetic Semiconductor
Subject AreaEngineering ; Physics
Indexed BySCI
WOS IDWOS:000321689500021
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Cited Times:2[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
AffiliationXinjiang Univ, Dept Phys Sci & Technol, Urumqi 830046, Peoples R China;Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Xinjiang Key Lab Elect Informat Mat & Devices, Urumqi 830011, Peoples R China
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Ren Yinshuan,Pan Dong,Jian Jikang,et al. Room-Temperature Ferromagnetism in Ti-Doped AlN Film[J]. INTEGRATED FERROELECTRICS,2013,146(1):154-160.
APA Ren Yinshuan.,Pan Dong.,Jian Jikang.,Jiang Xiaokang.,Li Jin.,...&Wu Rong.(2013).Room-Temperature Ferromagnetism in Ti-Doped AlN Film.INTEGRATED FERROELECTRICS,146(1),154-160.
MLA Ren Yinshuan,et al."Room-Temperature Ferromagnetism in Ti-Doped AlN Film".INTEGRATED FERROELECTRICS 146.1(2013):154-160.
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