Room-Temperature Ferromagnetism in Ti-Doped AlN Film
Ren Yinshuan; Pan Dong; Jian Jikang; Jiang Xiaokang; Li Jin; Sun Yanfei; Wu Rong
2013
Source PublicationINTEGRATED FERROELECTRICS
ISSN1058-4587
Volume146Issue:1Pages:154-160
Abstract

AlN film doped with 1.2 at.% Titanium (Ti) was successfully prepared on a silicon (100) substrate by radio frequency reactive sputtering. X-ray diffractometry (XRD) analysis clearly showed that the (002) peak position of the AlN:Ti film slightly shifted to higher angles compared with pure AlN, while the crystal structure of sample was maintained. The rocking curve results revealed that the deposited films have a good crystalline quality. X-ray photoelectron spectroscopes (XPS) proved that Ti atoms were successfully incorporated into AlN without forming any secondary phase. Atomic force microscopy (AFM) revealed the doped film sample possess smooth surface and homogeneous grain size with a root mean square roughness (RMS) value of 1.49nm. The magnetization versus magnetic field (M-H) curves indicated the Ti-doped AlN films exhibited room temperature ferromagnetism. The saturation magnetizations (Ms) and coercive fields (Hc) obtained at 300K were about 9.82 x 10(-6) emu and 75 Oe, respectively. The results reveal that Ti is a potential dopant for preparing diluted magnetic semiconductors film.

KeywordRadio Frequency Reactive Sputtering Aln Film Ti Doping Diluted Magnetic Semiconductor
Subject AreaEngineering ; Physics
DOI10.1080/10584587.2013.790185
Indexed BySCI
WOS IDWOS:000321689500021
Citation statistics
Cited Times:2[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/2693
Collection新疆维吾尔自治区电子信息材料与器件重点实验室
AffiliationXinjiang Univ, Dept Phys Sci & Technol, Urumqi 830046, Peoples R China;Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Xinjiang Key Lab Elect Informat Mat & Devices, Urumqi 830011, Peoples R China
Recommended Citation
GB/T 7714
Ren Yinshuan,Pan Dong,Jian Jikang,et al. Room-Temperature Ferromagnetism in Ti-Doped AlN Film[J]. INTEGRATED FERROELECTRICS,2013,146(1):154-160.
APA Ren Yinshuan.,Pan Dong.,Jian Jikang.,Jiang Xiaokang.,Li Jin.,...&Wu Rong.(2013).Room-Temperature Ferromagnetism in Ti-Doped AlN Film.INTEGRATED FERROELECTRICS,146(1),154-160.
MLA Ren Yinshuan,et al."Room-Temperature Ferromagnetism in Ti-Doped AlN Film".INTEGRATED FERROELECTRICS 146.1(2013):154-160.
Files in This Item:
File Name/Size DocType Version Access License
Room-temperature fer(353KB)期刊论文作者接受稿开放获取CC BY-NC-SAView Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Ren Yinshuan]'s Articles
[Pan Dong]'s Articles
[Jian Jikang]'s Articles
Baidu academic
Similar articles in Baidu academic
[Ren Yinshuan]'s Articles
[Pan Dong]'s Articles
[Jian Jikang]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Ren Yinshuan]'s Articles
[Pan Dong]'s Articles
[Jian Jikang]'s Articles
Terms of Use
No data!
Social Bookmark/Share
File name: Room-temperature ferromagnetism in Ti-doped AlN film.pdf
Format: Adobe PDF
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.