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Optical properties of electron beam and gamma-ray irradiated InGaAs/GaAs quantum well and quantum dot structures
Aierken A.; Guo Q.; Huhtio T.; Sopanen M.; He Ch F.; Li Y. D.; Wen L.; Ren D. Y.
2013
发表期刊RADIATION PHYSICS AND CHEMISTRY
ISSN0969-806X
卷号83期号:1页码:42-47
摘要The effects of electron beam and gamma-ray irradiation on the optical properties of InGaAs/GaAs quantum dot (QD), quantum well (QW), and bulk structures, which were grown by metal organic vapor phase epitaxy, have been investigated. Optical properties of all the structures were degraded by both kinds of irradiation. Electron beam irradiation caused a larger reduction in the photoluminescence (PL) intensity and carrier lifetime of the samples than gamma-ray irradiation. Also, red-shift of the PL peak was observed in almost all the irradiated QD and QW structures. Comparing the different structures, the QD structure showed the best radiation resistance.
关键词Irradiation Electron Beam Gamma-ray Quantum Structure Photoluminescence
学科领域Chemistry ; Nuclear Science & Technology ; Physics
DOI10.1016/j.radphyschem.2012.09.022
收录类别SCI
WOS记录号WOS:000312926500007
引用统计
被引频次:9[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.xjipc.cas.cn/handle/365002/2687
专题材料物理与化学研究室
作者单位Aalto Univ, Dept Micro & Nanosci, FI-00076 Aalto, Finland;Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China
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Aierken A.,Guo Q.,Huhtio T.,et al. Optical properties of electron beam and gamma-ray irradiated InGaAs/GaAs quantum well and quantum dot structures[J]. RADIATION PHYSICS AND CHEMISTRY,2013,83(1):42-47.
APA Aierken A..,Guo Q..,Huhtio T..,Sopanen M..,He Ch F..,...&Ren D. Y..(2013).Optical properties of electron beam and gamma-ray irradiated InGaAs/GaAs quantum well and quantum dot structures.RADIATION PHYSICS AND CHEMISTRY,83(1),42-47.
MLA Aierken A.,et al."Optical properties of electron beam and gamma-ray irradiated InGaAs/GaAs quantum well and quantum dot structures".RADIATION PHYSICS AND CHEMISTRY 83.1(2013):42-47.
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