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学科主题: Chemistry ; Nuclear Science & Technology ; Physics
题名:
Optical properties of electron beam and gamma-ray irradiated InGaAs/GaAs quantum well and quantum dot structures
作者: Aierken A.; Guo Q.; Huhtio T.; Sopanen M.; He Ch F.; Li Y. D.; Wen L.; Ren D. Y.
关键词: Irradiation ; Electron beam ; gamma-Ray ; Quantum structure ; Photoluminescence
刊名: RADIATION PHYSICS AND CHEMISTRY
发表日期: 2013
DOI: 10.1016/j.radphyschem.2012.09.022
卷: 83, 期:1, 页:42-47
收录类别: SCI
英文摘要: The effects of electron beam and gamma-ray irradiation on the optical properties of InGaAs/GaAs quantum dot (QD), quantum well (QW), and bulk structures, which were grown by metal organic vapor phase epitaxy, have been investigated. Optical properties of all the structures were degraded by both kinds of irradiation. Electron beam irradiation caused a larger reduction in the photoluminescence (PL) intensity and carrier lifetime of the samples than gamma-ray irradiation. Also, red-shift of the PL peak was observed in almost all the irradiated QD and QW structures. Comparing the different structures, the QD structure showed the best radiation resistance.
WOS记录号: WOS:000312926500007
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内容类型: 期刊论文
URI标识: http://ir.xjipc.cas.cn/handle/365002/2687
Appears in Collections:材料物理与化学研究室_期刊论文

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作者单位: Aalto Univ, Dept Micro & Nanosci, FI-00076 Aalto, Finland;Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China

Recommended Citation:
Aierken A.,Guo Q.,Huhtio T.,et al. Optical properties of electron beam and gamma-ray irradiated InGaAs/GaAs quantum well and quantum dot structures[J]. RADIATION PHYSICS AND CHEMISTRY,2013-01-01,83(1):42-47.
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