Orientation-dependent phase transition and dielectric properties of Ba0.85Ca0.15Ti0.9Zr0.1O3 thin films
Yang Shihua; Xu JinBao; Gao Bo; Wang Lei; Chen Jing; Chen Xueying; Xu, JB
2013
发表期刊JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
ISSN0957-4522
卷号24期号:2页码:658-661
摘要Polycrystalline Ba0.85Ca0.15Ti0.9Zr0.1O3 (BCZT) thin films with (100) preferential and random orientation are prepared on the LaNiO3 electrodes coated on Si substrates by chemical solution deposition process. The results show that the two types of films stabilize in the pure perovskite structure. The ferro-paraelectric phase transitions of two types of films occur at the temperature ranges of 280.2-297.8 K and 278.4-287.6 K, respectively. The dielectric constant, relaxation time and tunability of the random orientation film are smaller than those of the (100) preferential film but both almost have the similar leakage current characteristics. The mechanism associated with the change of the electrical properties of the thin films is also discussed.
学科领域Engineering ; Materials Science ; Physics
DOI10.1007/s10854-012-0787-5
收录类别SCI
WOS记录号WOS:000313799700037
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被引频次:3[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.xjipc.cas.cn/handle/365002/2686
专题新疆维吾尔自治区电子信息材料与器件重点实验室
通讯作者Xu, JB
作者单位Chinese Acad Sci, Xinjiang Key Lab Elect Informat Mat & Devices, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China;Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China
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Yang Shihua,Xu JinBao,Gao Bo,et al. Orientation-dependent phase transition and dielectric properties of Ba0.85Ca0.15Ti0.9Zr0.1O3 thin films[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2013,24(2):658-661.
APA Yang Shihua.,Xu JinBao.,Gao Bo.,Wang Lei.,Chen Jing.,...&Xu, JB.(2013).Orientation-dependent phase transition and dielectric properties of Ba0.85Ca0.15Ti0.9Zr0.1O3 thin films.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,24(2),658-661.
MLA Yang Shihua,et al."Orientation-dependent phase transition and dielectric properties of Ba0.85Ca0.15Ti0.9Zr0.1O3 thin films".JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 24.2(2013):658-661.
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