Low-Dose 1 MeV Electron Irradiation-Induced Enhancement in the Photoluminescence Emission of Ga-Rich InGaN Multiple Quantum Wells
Zhang, XF (Zhang Xiao-Fu); Li, YD (Li Yu-Dong); Guo, Q (Guo Qi); Lu, W (Lu Wu)
2013
Source PublicationCHINESE PHYSICS LETTERS
ISSN0256-307X
Volume30Issue:7Pages:1-3
Abstract

We investigate the photoluminescence (PL) emission from InGaN/GaN multiple quantum-well structures before and after 1 MeV electron irradiation. The PL peak intensity exhibits a slight enhancement after low-dose electron irradiation (2 x 10(13) e/cm(2)), and then decreases with the cumulative electron dose. Meanwhile, the full width at half maximum of the PL spectrum narrows after low-dose electron irradiation and widens when the irradiation dose is relatively high. With respect to the yellow photoluminescence, there is no significant change until the electron fluence has accumulated up to 10(14) e/cm(2).

Subject AreaPhysics
DOI10.1088/0256-307X/30/7/076102
Indexed BySCI
WOS IDWOS:000321763700036
Citation statistics
Cited Times:3[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/2651
Collection新疆维吾尔自治区电子信息材料与器件重点实验室
材料物理与化学研究室
Corresponding AuthorGuo, Q (Guo Qi)
AffiliationChinese Acad Sci, Key Lab Funct Mat & Devices Special Environm, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China
Recommended Citation
GB/T 7714
Zhang, XF ,Li, YD ,Guo, Q ,et al. Low-Dose 1 MeV Electron Irradiation-Induced Enhancement in the Photoluminescence Emission of Ga-Rich InGaN Multiple Quantum Wells[J]. CHINESE PHYSICS LETTERS,2013,30(7):1-3.
APA Zhang, XF ,Li, YD ,Guo, Q ,&Lu, W .(2013).Low-Dose 1 MeV Electron Irradiation-Induced Enhancement in the Photoluminescence Emission of Ga-Rich InGaN Multiple Quantum Wells.CHINESE PHYSICS LETTERS,30(7),1-3.
MLA Zhang, XF ,et al."Low-Dose 1 MeV Electron Irradiation-Induced Enhancement in the Photoluminescence Emission of Ga-Rich InGaN Multiple Quantum Wells".CHINESE PHYSICS LETTERS 30.7(2013):1-3.
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