Single-[100]-oriented Mn1.56Co0.96Ni0.48O4 (MCN) thinfilms were grown on amorphous surfaces of thermally oxidized Si(100) substrates at low temperatures below 300degreesC using laser molecular beam epitaxy (LMBE) technique. The structural and electrical properties of the films were investigated. The film grown at the optimum temperature of 250 degreesC was atomically smooth with a root-mean-square roughness of 0.373 nm over 2 x 2 mu m(2) on the surface. The current voltage characteristics showed the Ohmic behavior, and the resistance temperature relationship exhibited negative temperature coefficient (NTC) thermistor characteristics. The electron transport of the single-[100]-oriented MCN thin film was found to be by nearest-neighbor hopping. The successful growthof single-oriented MCN thinfilms opens a door for studying the influence of crystallographic orientation on the electron conduction mechanisms and on the properties of MCN thinfilms. This study also suggests that LMBE is preferable for fabricating high-quality MCN thinfilms for NTC thermistors and bolometer infrared detectors.
Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China;Xinjiang Key Lab Elect Informat Mat & Devices, Urumqi 830011, Peoples R China;Chinese Acad Sci, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China;Univ Chinese Acad Sci, Beijing 100049, Peoples R China
Recommended Citation:
Ji Guang,Chang Aimin,Xu Jinbao,et al. Low-temperature (< 300 degrees C) growth and characterization of single-[100]-oriented Mn-Co-Ni-O thin films[J]. MATERIALS LETTERS,2013-01-01,107(9):103-106.