栅控横向PNP双极晶体管电离辐射效应
Alternative Titleradiation effect of gate controlled lateral pnp bjts
席善斌; 陆妩; 任迪远; 王志宽; 周东; 文林; 孙静
2012
Source Publication核技术
ISSN0253-3219
Volume35Issue:11Pages:827-832
Abstract

设计并制作了一种栅控横向PNP双极晶体管测试结构,将其与相同工艺条件下制作的常规横向PNP双极晶体管封装在同一管壳内。在相同条件下对两种器件进行 60Co-gamma辐照效应和退火特性研究。结果发现,栅控和常规双极晶体管在基极电流、集电极电流、过剩基极电流和归一化电流增益方面,对电离辐射响 应高度一致。对栅控横向PNP双极晶体管辐照感生电荷进行了定量分离,研究国产栅控横向PNP双极晶体管辐照感生缺陷的定量变化就可以客观、科学地反应国 产常规横向PNP双极晶体管辐照感生电荷变化。

Other Abstract

Design and fabricate a new test structure of bipolar device: the gate controlled later PNP bipolar transistor (GCLPNP BJT), then sealed it together with the normal lateral PNP bipolar transistor which is made under the same manufacture process. Then 60Co-g radiation effects and annealing behaviors of these two structures are investigated. The results show that the response about base current, collector current, access base current and normalized current gain of GCLPNP bipolar transistor are almost identical to the normal one. Radiation induced defects in the GCLPNP bipolar transistor is separated quantitatively. Studying on the quantitative change of radiation induced defects in the domestic gate controlled bipolar transistor should be a useful way to research the change of radiation induced charges of normal PNP bipolar transistor.

KeywordPnp双极晶体管 60co-gamma辐照 辐照感生电荷 电荷分离
Subject AreaEngineering (Provided By Thomson Reuters)
Indexed ByCSCD
CSCD IDCSCD:4713579
Citation statistics
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/2594
Collection新疆维吾尔自治区电子信息材料与器件重点实验室
材料物理与化学研究室
Affiliation中国科学院新疆理化技术研究所;新疆电子信息材料与器件重点实验室;中国科学院大学;模拟集成电路国家重点实验室
Recommended Citation
GB/T 7714
席善斌,陆妩,任迪远,等. 栅控横向PNP双极晶体管电离辐射效应[J]. 核技术,2012,35(11):827-832.
APA 席善斌.,陆妩.,任迪远.,王志宽.,周东.,...&孙静.(2012).栅控横向PNP双极晶体管电离辐射效应.核技术,35(11),827-832.
MLA 席善斌,et al."栅控横向PNP双极晶体管电离辐射效应".核技术 35.11(2012):827-832.
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