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学科主题: Engineering (provided by Thomson Reuters)
题名: 栅控横向PNP双极晶体管电离辐射效应
其他题名: radiation effect of gate controlled lateral pnp bjts
作者: Xi Shanbin; Lu Wu; Ren Diyuan; Wang Zhikuan; Zhou Dong; Wen Lin; Sun Jing
关键词: PNP双极晶体管 ; 60Co-gamma辐照 ; 辐照感生电荷 ; 电荷分离
刊名: Nuclear Techniques
发表日期: 2012
卷: 35, 期:11
收录类别: CSCD
资助者: 国家自然科学基金资助项目
摘要: 设计并制作了一种栅控横向PNP双极晶体管测试结构,将其与相同工艺条件下制作的常规横向PNP双极晶体管封装在同一管壳内。在相同条件下对两种器件进行 60Co-gamma辐照效应和退火特性研究。结果发现,栅控和常规双极晶体管在基极电流、集电极电流、过剩基极电流和归一化电流增益方面,对电离辐射响 应高度一致。对栅控横向PNP双极晶体管辐照感生电荷进行了定量分离,研究国产栅控横向PNP双极晶体管辐照感生缺陷的定量变化就可以客观、科学地反应国 产常规横向PNP双极晶体管辐照感生电荷变化。
英文摘要: Design and fabricate a new test structure of bipolar device: the gate controlled later PNP bipolar transistor (GCLPNP BJT), then sealed it together with the normal lateral PNP bipolar transistor which is made under the same manufacture process. Then 60Co-g radiation effects and annealing behaviors of these two structures are investigated. The results show that the response about base current, collector current, access base current and normalized current gain of GCLPNP bipolar transistor are almost identical to the normal one. Radiation induced defects in the GCLPNP bipolar transistor is separated quantitatively. Studying on the quantitative change of radiation induced defects in the domestic gate controlled bipolar transistor should be a useful way to research the change of radiation induced charges of normal PNP bipolar transistor.
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内容类型: 期刊论文
URI标识: http://ir.xjipc.cas.cn/handle/365002/2594
Appears in Collections:新疆维吾尔自治区电子信息材料与器件重点实验室_期刊论文

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作者单位: 中国科学院新疆理化技术研究所;新疆电子信息材料与器件重点实验室;中国科学院大学;模拟集成电路国家重点实验室

Recommended Citation:
Xi Shanbin,Lu Wu,Ren Diyuan,等. 栅控横向PNP双极晶体管电离辐射效应[J]. Nuclear Techniques,2012,35(11).
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文件名: 栅控横向PNP双极晶体管电离辐射效应.pdf
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