X射线对金硅界面剂量增强效应的模拟研究
吴正新; 何承发; 陆妩; 郭旗; 艾尔肯·阿不列木; 于新; 张磊; 邓伟; 郑齐文
2013
Source Publication核技术
ISSN0253-3219
Volume36Issue:6Pages:10-15
Abstract

本文以光子与物质的相互作用机制为基础,论述了剂量增强效应的基本原理。用蒙特卡罗方法研究了金和硅交界时X射线入射产生的剂量梯度分布,通过MCNP5程序建立了一个三维的金硅界面结构模型,计算了不同厚度的金在金硅界面的剂量增强因子。计算结果表明:当X射线为30–300 keV时,界面附近硅一侧存在较大的剂量增强效应。金的厚度影响界面附近的剂量增强效果,当金的厚度为0–10 m时,剂量增强因子随金的厚度增大;当金的厚度超过10 m后,剂量增强因子随金厚度的增加而减少。

Other Abstract

The dose enhancement factor of X-ray was found in 1970s, because of its bad damage to electronic devices. Purpose: This paper is mainly to calculate the dose-enhancement factor at Au/Si interfaces. Methods: The gradient distribution of dose with X-rays has been studied at and near the interface of Au/Si by Monte-Carlo simulation of particle transportation. The mechanism of dose enhancement is discussed based on the principles of interaction of photon with matter. A 3D Au/Si model has been established by MCNP5 program and the dose-enhancement factors of different thicknesses Au/Si interfaces were calculated by Monte Carlo method. Results: The calculated results demonstrate that there exists a stronger dose-enhancement in the Si side near the interface when the energy of X-ray is 30–300 keV. Conclusions: When the thickness of Au is 0–10 m, dose-enhancement factor ofX-ray increases along with the increase of the thickness of Au, when the thickness of Au exceeds 10 m ,dose-enhancement factor of X-ray decreases along with the increase of the thickness of Au.

Keyword蒙特卡罗方法 剂量增强因子 界面 能量沉积 体元
Indexed ByCSCD
CSCD IDCSCD:4876160
Citation statistics
Cited Times:3[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/2563
Collection新疆维吾尔自治区电子信息材料与器件重点实验室
材料物理与化学研究室
Affiliation新疆大学物理科学与技术学院;中国科学院新疆理化技术研究所;新疆电子信息材料与器件重点实验室
Recommended Citation
GB/T 7714
吴正新,何承发,陆妩,等. X射线对金硅界面剂量增强效应的模拟研究[J]. 核技术,2013,36(6):10-15.
APA 吴正新.,何承发.,陆妩.,郭旗.,艾尔肯·阿不列木.,...&郑齐文.(2013).X射线对金硅界面剂量增强效应的模拟研究.核技术,36(6),10-15.
MLA 吴正新,et al."X射线对金硅界面剂量增强效应的模拟研究".核技术 36.6(2013):10-15.
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