中国科学院新疆理化技术研究所机构知识库
Advanced  
XJIPC OpenIR  > 新疆维吾尔自治区电子信息材料与器件重点实验室  > 期刊论文
题名: X射线对金硅界面剂量增强效应的模拟研究
作者: 吴正新; 何承发; 陆妩; 郭旗; 艾尔肯阿不列木; 于新; 张磊; 邓伟; 郑齐文
关键词: 蒙特卡罗方法 ; 剂量增强因子 ; 界面 ; 能量沉积 ; 体元
刊名: 核技术
发表日期: 2013
卷: 36, 期:6, 页:41562
资助者: 国家自然科学基金资助
摘要: 本文以光子与物质的相互作用机制为基础,论述了剂量增强效应的基本原理。用蒙特卡罗方法研究了金和硅交界时X射线入射产生的剂量梯度分布,通过MCNP5程序建立了一个三维的金硅界面结构模型,计算了不同厚度的金在金硅界面的剂量增强因子。计算结果表明:当X射线为30–300 keV时,界面附近硅一侧存在较大的剂量增强效应。金的厚度影响界面附近的剂量增强效果,当金的厚度为0–10 m时,剂量增强因子随金的厚度增大;当金的厚度超过10 m后,剂量增强因子随金厚度的增加而减少。
英文摘要: The dose enhancement factor of X-ray was found in 1970s, because of its bad damage to electronic devices. Purpose: This paper is mainly to calculate the dose-enhancement factor at Au/Si interfaces. Methods: The gradient distribution of dose with X-rays has been studied at and near the interface of Au/Si by Monte-Carlo simulation of particle transportation. The mechanism of dose enhancement is discussed based on the principles of interaction of photon with matter. A 3D Au/Si model has been established by MCNP5 program and the dose-enhancement factors of different thicknesses Au/Si interfaces were calculated by Monte Carlo method. Results: The calculated results demonstrate that there exists a stronger dose-enhancement in the Si side near the interface when the energy of X-ray is 30–300 keV. Conclusions: When the thickness of Au is 0–10 m, dose-enhancement factor ofX-ray increases along with the increase of the thickness of Au, when the thickness of Au exceeds 10 m ,dose-enhancement factor of X-ray decreases along with the increase of the thickness of Au.
内容类型: 期刊论文
URI标识: http://ir.xjipc.cas.cn/handle/365002/2563
Appears in Collections:新疆维吾尔自治区电子信息材料与器件重点实验室_期刊论文

Files in This Item:
File Name/ File Size Content Type Version Access License
X射线对金硅界面剂量增强效应的模拟研究.pdf(2614KB)期刊论文作者接受稿开放获取View 联系获取全文

作者单位: 新疆大学物理科学与技术学院;中国科学院新疆理化技术研究所;新疆电子信息材料与器件重点实验室

Recommended Citation:
吴正新,何承发,陆妩,等. X射线对金硅界面剂量增强效应的模拟研究[J]. 核技术,2013,36(6):41562.
Service
Recommend this item
Sava as my favorate item
Show this item's statistics
Export Endnote File
Google Scholar
Similar articles in Google Scholar
[吴正新]'s Articles
[何承发]'s Articles
[陆妩]'s Articles
CSDL cross search
Similar articles in CSDL Cross Search
[吴正新]‘s Articles
[何承发]‘s Articles
[陆妩]‘s Articles
Related Copyright Policies
Null
Social Bookmarking
Add to CiteULike Add to Connotea Add to Del.icio.us Add to Digg Add to Reddit
文件名: X射线对金硅界面剂量增强效应的模拟研究.pdf
格式: Adobe PDF
所有评论 (0)
暂无评论
 
评注功能仅针对注册用户开放,请您登录
您对该条目有什么异议,请填写以下表单,管理员会尽快联系您。
内 容:
Email:  *
单位:
验证码:   刷新
您在IR的使用过程中有什么好的想法或者建议可以反馈给我们。
标 题:
 *
内 容:
Email:  *
验证码:   刷新

Items in IR are protected by copyright, with all rights reserved, unless otherwise indicated.

 

 

Valid XHTML 1.0!
Powered by CSpace