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XJIPC OpenIR  > 新疆维吾尔自治区电子信息材料与器件重点实验室  > 期刊论文
题名: 铁掺杂对不同导电类型硅材料电阻率的影响
作者: 周步康; 范艳伟; 陈朝阳
关键词: p型硅 ; n型硅 ; 深能级杂质 ; Fe ; 电阻率 ; 补偿度
刊名: 电子元件与材料
发表日期: 2013
卷: 32, 期:7, 页:41560
资助者: 新疆维吾尔自治区自然科学基金资助项目;乌鲁木齐市科技项目资助
摘要: 采用电阻率为4.8.cm的p型硅片和10.cm的n型硅片,通过高温扩散法制备出了Fe掺杂的补偿硅材料。在室温避光条件下,测量样品电阻率ρ,并用XRD对扩散后的样品进行分析,研究了Fe掺杂对不同导电类型硅材料电阻率的影响。结果表明:相对于n型硅材料,深能级杂质Fe掺杂对p型硅材料电阻率的影响更大,其Fe掺杂p型硅材料电阻率远大于Fe掺杂n型硅材料;当p型硅表面Fe扩散源浓度为1.74×10–5mol/cm2时,在1 200℃下扩散1 h后,材料具有最大电阻率7 246.cm。
英文摘要: The iron doped compensation silicon materials were prepared by diffusing iron into p-type silicon of 4.8Ω•cm and n-type silicon of 10 Ω•cm using high temperature diffusion method. The resistivity of doped samples was measured at room temperature and photophobic condition. The samples were also analyzed using X-ray diffraction method. The effects of iron-doping on resistivity of different Si materials were studied. The results show that deep level impurity iron has greater influence on resistivity of p-type silicon than that of n-type silicon, the resitivity of iron-doped p-type silicon is much more than that of iron-doped n-type silicon, and the resistivity of the iron doped p-type silicon obtains the maximum value of 7 246 Ω•cm when the doping process is carried out at 1 200 ℃ for 1 h with the surface density of the iron dopant source being 1.74×10–5 mol/cm2.
内容类型: 期刊论文
URI标识: http://ir.xjipc.cas.cn/handle/365002/2561
Appears in Collections:新疆维吾尔自治区电子信息材料与器件重点实验室_期刊论文

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作者单位: 中国科学院新疆理化技术研究所;新疆电子信息材料与器件重点实验室;中国科学院特殊环境功能材料与器件重点实验室;中国科学院大学

Recommended Citation:
周步康,范艳伟,陈朝阳. 铁掺杂对不同导电类型硅材料电阻率的影响[J]. 电子元件与材料,2013,32(7):41560.
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文件名: 铁掺杂对不同导电类型硅材料电阻率的影响.pdf
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