胡天乐; 陆妩; 席善斌; 郭旗; 何承发; 吴雪; 王信
Source Publication物理学报


Other Abstract

Radiation responses and variation characteristics of PNP input bipolar operational amplifier LM837 have been studied in two different radiation environments under the 1MeV electron and 60Coγ irradiation. The parametric failure mechanism of LM837 caused by a total dose radiation for different biases has been discussed through analyzing the characteristics of LM837 which is annealed at room temperature, 100 ◦C and 125 .C after irradiation. The results show that the ionization damage is the primary damage for LM837caused by 1MeV electron irradiation, and it is larger than that by 60Coγ source irradiation under forward bias condition. In the different radiation environments, bias current under forward bias condition changes larger than that with zero bias. Annealing characteristics of LM837 after irradiation are dependeut on the annealing temperatures, and this relationship is directly related to the increase of radiation-induced interface traps during irradiation

KeywordPnp输入双极运算放大器 电子和60coγ源 偏置条件 退火
Indexed BySCI ; CSCD
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Cited Times:2[CSCD]   [CSCD Record]
Document Type期刊论文
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GB/T 7714
胡天乐,陆妩,席善斌,等. PNP输入双极运算放大器在不同辐射环境下的辐射效应和退火特性[J]. 物理学报,2013,62(7):325-330.
APA 胡天乐.,陆妩.,席善斌.,郭旗.,何承发.,...&王信.(2013).PNP输入双极运算放大器在不同辐射环境下的辐射效应和退火特性.物理学报,62(7),325-330.
MLA 胡天乐,et al."PNP输入双极运算放大器在不同辐射环境下的辐射效应和退火特性".物理学报 62.7(2013):325-330.
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