With the development of space technolegy, more and more electronic devices will applied in the space radiation environment. Electronic devices will be induced radiation damage by the rays and particals, which are exsit in the radiatonal enviroment. The damage will induce the degration of the devices and influence the reliability of electronic system. Memory is a very important component, because it is the medium to store the program, data and information of the electronic system. The evaluation of the memory for space application is hard to perform due to the great variety, the different mechanism and the diverse radiation sensitive parameter. The previous research showed that the memory will be induced radiation damage (ionization damage, displacement damage, single event upset and so on). Phase change random access memory (PCRAM) appears to be the best candidates for next generation non-volatile memory due to their improved performance. Phase change material (PCM) is the core part of PCRAM, and the properties of PCM have important influences to the PCRAM. In this paper, the radiation resistence ability of PCM has been evaluated by the radiation experiments of various rays and particals. In the present paper, several results can be obtained:(1) The total dose effects of phase change materials and the PCRAM cell, which is based on the alloy of Ge2Sb2Te5 has been investigated. The radiation immune ability of PCM is evaluated by 60Co γ ray irradiation, the dose rate is constant, and the total doses are selected four different doses. After irradiation, the phase transition behavior of PCM keep stable, the properties (the crystallization temperature, the data retention time, the crystallization active energy and the TEM images) of the materials almost have no change. The total dose radiation experiments are taken to the Ge2Sb2Te5-alloy-based PCRAM cell.