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题名: 混合工艺数模转换器总剂量效应研究
作者: 王信
答辩日期: 2013-05-27
导师: 陆妩
专业: 材料工程
授予单位: 中国科学院大学
授予地点: 北京
学位: 硕士
关键词: 数模转换器 ; 总剂量效应 ; BiCMOS CBCMOS LC2MOS 偏置 ; 剂量率效应
摘要:

在航天事业和数字技术飞速发展的今天,数模转换器(Digital to Analog ConverterDAC)作为一种将数字信号转换成模拟信号的电路,被广泛应用于卫星、航天等技术领域以提高信号处理能力。然而,卫星及航天器所在的空间环境存在大量的高能粒子和射线,数模转换器处于极端恶劣的辐射环境中,性能将会劣化,给卫星及航天器的可靠性带来威胁。数模转换器复杂的设计为其总剂量效应研究带来挑战,尤其是近年来为提高数模转换器的性能,在其工艺及结构方面所做的改进,使得数模转换器的电路变得更为复杂。工艺方面,随着半导体制作技术的发展,制作工艺不再只是单一的工艺,越来越复杂的制作工艺如薄膜电阻工艺与互补双极(complementary bipolar, CB) CMOS工艺、LC2MOSBiCMOS工艺等混合工艺被引入到现代数据转换器的制作中,使得数模转换器的精度、稳定性等各项性能指标提高的同时为数模转换器总剂量效应的研究及辐射评估带来了难题;结构方面,不同应用领域对数模转换器的分辨率、转换速度及稳定性等性能的侧重不同,数模转换器采用多种器件架构来达到不同的应用需求,目前主流的器件架构主要有R-2R梯形网络架构、电流舵架构、Σ-Δ架构等。因此,为考察混合工艺数模转换器总剂量效应,了解器件架构和制作工艺对数模转换器总剂量效应的影响,有必要对不同制作工艺及器件架构的数模转换器总剂量效应进行研究。国内外虽然已经报道了部分有关数模转换器辐射效应的研究,但尚未有系统的针对不同混合工艺和器件架构的数模转换器在60Coγ射线环境下总剂量效应及辐射损伤规律的研究成果,本论文率先开展了相关方面的研究工作,为不同工艺及架构的数模转换器总剂量效应评估提供了第一手的试验资料。本论文对混合工艺数模转换器总剂量效应的研究,主要从两个方面进行:研究剂量率对混合工艺数模转换器总剂量效应的影响,选取高低两种剂量率,判断混合工艺数模转换器的总剂量效应是否具有低剂量损伤增强效应;研究不同偏置对数模转换器总剂量效应的影响,分析处于不同工作模式的数模转换器的总剂量效应。通过上述两方面的试验研究,发现各混合工艺数模转换器在辐射作用下均发生功能退化,多项静态参数表现为辐射敏感参数,并进一步分析了混合工艺数模转换器的辐射损伤特性规律和辐射损伤机理,发现数模转换器的辐射损伤模式及程度与器件工艺及架构密切相关。为获得器件架构及制作工艺对混合工艺数模转换器总剂量效应的影响,本论文选取了四款来自两个公司的混合工艺数模转换器,涉及CBCMOSLC2MOSBiCMOS三种混合工艺和R-2R梯形网络架构、电流舵架构两种器件架构。对四款器件进行了高低剂量率和不同偏置条件下的总剂量辐照试验,对比分析各款器件的试验结果,发现,虽然不同工艺及架构的数模转换器抗辐射能力不同,但其辐射损伤模式及剂量率效应表现出一定的规律性:器件架构对数模转换器的失效模式有很大的影响,R-2R架构的数模转换器辐射失效时功能曲线表现出明显的阶梯畸变;制作工艺与数模转换器表现出的剂量率效应有关,LC2MOS工艺以CMOS工艺为基础,内部集成了极少量的双极工艺,该工艺的数模转换器表现出明显的时间相关效应,CBCMOS工艺是集CB工艺和CMOS工艺为一体的混合工艺,该工艺的数模转换器各项参数表现出不同的剂量率效应,部分参数表现为时间相关效应,部分参数表现为低剂量率下更为敏感,而BiCMOS工艺数模转换器的剂量率效应与其辐射敏感模块的工艺特点有关。

综上所述,本论文于国内外率先开展了系统的针对不同混合工艺和器件架构的数模转换器在60Coγ射线环境下总剂量效应及辐射损伤规律的研究工作。首先讨论了辐照剂量率及偏置状态对各混合工艺数模转换器的总剂量效应的影响,并初步分析了混合工艺数模转换器的辐射损伤模式及辐射损伤机理;其次,对比分析了不同工艺及架构的混合工艺数模转换器的辐射损伤规律,发现数模转换器功能失效模式取决于器件架构,其剂量率效应取决于数模转换器的复合工艺类型和关键模块采用的工艺类型,初步建立了混合工艺数模转换器总剂量效应试验方法,并为建立其统一的总剂量效应评估方法提供了试验依据。

英文摘要:
With the rapid development of aerospace industry and digital technology, the digital to analog converter, as a digital signal into an analog signal circuit, has been widely used in the field of satellite, aerospace and other technologies in order to improve the signal processing capability. However, with a large number of high-energy particles and rays in space environment, the performance of DACs, working in the extreme radiation environment, will be degraded and or even failure to satellites and spacecrafts. DAC complex design challenges the research of its total dose irradiation, especially in recent years. The effect in fabrication process and structure for the improvements of the performance of DAC results circuit to be more complex. With the development of the semiconductor production technology, fabrication process is not just a single technology, but become more and more complex, such as the mixed process of thin film resistor technology and complementary bipolar CMOS process, LC2MOS (Linear compatible CMOS) and BiCMOS process. The above three processes are introduced to modern data converter production. The introduction of hybrid technology improves the performance of DAC, and yet comes the problem to the research of DAC total dose irradiation. According to the structure, different application field focus on different performance, including the resolution, conversion speed and stability. In order to meet the need of different application areas, a variety of device structures are designed to produce DAC, including R-2R ladder network architecture, current steering architecture and sigma-delta architecture. In order to investigate the mixed process DAC total dose irradiation and the effect of device architecture and process on the DAC total dose irradiation, it is necessary to study the DAC total dose irradiation of different production process and device architecture. Although some of the DAC radiation effects have been reported, there is no systematic research of total dose irradiation and the law of radiation damage for DAC of different mixing process and device architecture under 60Co gamma-ray environment. In this paper, we firstly systematically carry out the related research which provides the first experimental data for the DAC total dose irradiation assessment of different process and structure. The investigation of mixing process DAC total dose irradiation mainly contains the following two aspects: The impact of dose rate on the mixing process DAC total dose irradiation has been obtained. Select high and low dose rate in the radiation test on DAC sample to determine whether the mixing process DAC total dose irradiation shows ELDRS. The impact of bias on the DAC total dose irradiation has been studied by means of determination of the total dose irradiation in the different operating modes of DAC sample. Our experiment study on these two areas gives the result of the total dose irradiation of mixing process DAC, and contributes to the further analysis of the rules and the mechanism of the mixing process DAC radiation damage. Select four mixing process DACs from the two companies produced by CBCMOS, LC2MOS and BiCMOS process and two kinds of architectures including both the R-2R the ladder network architecture and current steering architecture. Test the total dose irradiation of the four kinds of devices under the different dose rates and bias conditions. Through contrast analysis of test results, the relation of the mixing process DAC radiation damage mode has been obtained. Although the radiation resistance of DACs made with different process and structure is different, the radiation damage model and dose-rate effect perform certain regularity: Device architecture has a great relationship with the failure mode of DACs, and the radiation failure function curves of DACs with R-2R architecture shows obviously ladder distortion; Production process is related to the dose-rate effect of the DACs. LC2MOS process DAC shows significant time-dependent effect, because of its fabrication based on CMOS process. The parameters of DAC architected with CBCMOS process exhibit different dose-rate effect in that there are part of the parameters performing time-dependent effects and part of the parameters more sensitive to low dose rate, which comes from the CBCMOS combining precision CB process with low power CMOS logic. The dose-rate effect of BiCMOS DAC is related to the process of radiation sensitive module. In summary, in this paper we firstly discuss the impact of radiation dose rate and bias state on mixing process DAC total dose irradiation, and preliminarily obtain the radiation damage model of mixing process DAC and the mechanism of radiation damage. Then, through contrast analysis of the law of radiation damage of mixing process DAC with different process and structure, we obtain the similarities and differences of DAC radiation damage mode fabricated with different process and structure, and the experimental basis for the establishment of assessment methods of mixing process DAC total dose irradiation is provided at last.
内容类型: 学位论文
URI标识: http://ir.xjipc.cas.cn/handle/365002/2507
Appears in Collections:材料物理与化学研究室_学位论文

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作者单位: 中国科学院新疆理化技术研究所

Recommended Citation:
王信. 混合工艺数模转换器总剂量效应研究[D]. 北京. 中国科学院大学. 2013.
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