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题名: 基于新型双极测试结构的低剂量率辐照感生缺陷研究
作者: 席善斌
答辩日期: 2013-05-27
导师: 任迪远、陆妩
专业: 微电子学与固体电子学
授予单位: 中国科学院大学
授予地点: 北京
学位: 博士
关键词: 低剂量率辐射损伤增强效应 ; 栅控晶体管 ; 电荷分离 ; 损伤机理 ; 竞争模型
摘要:

随着空间科学技术的快速发展,越来越多的半导体器件及集成电路工作于空间复杂而又苛刻的辐射环境中。受电离辐射作用影响,器件参数会产生不同程度的退化,给宇航系统可靠性带来严重隐患,这使得研究半导体器件空间辐射效应及其潜在的损伤机理逐渐成为近年来国内外微电子学领域的一个热门课题。由于具有高频、低阻、低噪声和良好的线性度,双极器件和电路被广泛应用于空间系统电路中。但是低剂量率辐射损伤增强效应的存在,严重威胁了航天器电子系统的稳定性和可靠性,大大缩短了其使用寿命,因而受到广泛关注。

近年来,国际上投入了大量人力、物力进行了有关双极器件和电路的低剂量率辐射损伤增强效应研究,不仅包括不同偏置、不同剂量率辐照、不同器件类型、不同工艺参数等对器件或电路辐照效应的影响,还开展了各种条件下的加速评估方法研究。虽然研究工作不断深入,但是由于双极晶体管结构及制造工艺均不同于MOS场效应晶体管,受辐照感生电荷分离方法限制,获得的低剂量率辐射损伤失效机理模型,只能定性地描述器件宏观参数变化,对氧化物陷阱电荷和界面陷阱电荷引起器件参数退化和功能失效的潜在原因并不明朗,从而制约了双极器件抗辐射加固技术的发展。

本文基于Silvaco的半导体工艺和器件的计算机模拟,在国内首次成功研制了可用于辐照实验和电荷分离的、不同工艺参数栅控横向PNP双极晶体管、栅控衬底PNP双极晶体管、栅控横向NPN双极晶体管、栅控纵向NPN双极晶体管以及栅控二极管结构,分析了栅控晶体管在不同外加栅极电压情况下所处的几种状态,测试了栅控晶体管的常规特性、栅扫描特性以及亚阈扫描特性。借鉴金属-氧化物-半导体场效应晶体管辐照感生缺陷测试原理,成功建立了两种双极器件辐射感生缺陷的测试分析方法——中带电压法和栅扫描法,并定量分离了晶体管辐照感生氧化物陷阱电荷和界面陷阱电荷,从而将晶体管宏观参数退化和辐照感生的微观缺陷联系起来,研究晶体管高、低剂量率辐照及退火过程中的辐照、退火效应及其潜在的失效机理。

不仅对栅控横向PNP双极晶体辐照感生缺陷进行了定量分离,还首次成功地对栅控横向NPN和纵向NPN双极晶体管的辐照感生缺陷进行了定量分离,使双极器件辐照感生缺陷定量分离研究获得突破性进展。在对各种栅控测试结构辐射感生缺陷定量分离的基础上,基于空间电荷模型,验证了竞争模型,完善了双极器件低剂量率辐射损伤增强效应的物理机制。此外,研究了晶体管不同剂量率辐照响应规律,以及外加栅极电压对双极晶体管电离辐照的影响,分析了基极电流峰值展宽效应。

本文为研究国产双极器件抗低剂量率辐射损伤提供了一种新的分析方法和测试手段,为完善已提出的空间电荷模型,发展竞争模型提供了理论依据,也为国产抗辐射加固器件的研制和生产提供了方法指导。

英文摘要:
With the rapid development of space science and technology, more and more semiconductor devices and ICs will be worked in complicated and and harsh space radiation environment. The circuit functions will be degraded in some degree because of the ionizing radiation effects existing in the space environment, bringing a series of reliability problems to astronautical and aeronautical system applications. This makes the study of radiation effects and the underlying damage mechanisms to become a hot topic of home and abroad gradually in recent years in the field of microelectronics. Because of its high frequency, low resistance, low noise and good linearity, analog circuits are widely used in space system circuits. However, the exists of ELDRS in analog ICs is a serious threaten to the stability and reliability of spacecraft electronic systems, greatly reducing the operating life, and thus subject to widespread concern in the aerospace and semiconductor manufacturing industries. In recent years, researchers took great effects to investigate the ELDRS, have gotten some good results and established several models about ELDRS. But due to the structures and the manufacture processes of bipolar transistors are different from the MOSFETs, and confined by the quantitative separation of radiation induced Not and Nit, the obtained mechanism models can only qualitatively describe the changes in the macroscopic parameters of the devices, but how the Not and Nit produced and the relationship between defects and characteristic degradation is still unknown. Use the Silvaco process and device simulation, we successfully manufactured the GCLPNP BJTs, GCLNPN BJTs, GCVNPN BJTS and Gated Diodes with different process parameters for the first time in our country. We also analyzed the band conditions under various gate biases, obtained the device normal and gated characteristics, established two techniques ( the Subthreshold-Current technique and the gate sweep technique ) to separate the radiation induced Not and Nit quantitatively, then studied the radiation effects and underlying mechanisms during high/low dose radiation and annealing process. Quantitative charge separation is carried out not only on the gated PNP BJTs, but also on gated NPN NJTs and gated diodes. Base on the radiation induced charge separation of different test structures and the space charge model, we validated the competition model and developed the physical mechanisms of ELDRS. At last the dose rate response and the gate bias effects on the irradiated bipolar transistors are studied; the base current broadening mechanisms are also invented. A new analysis method and testing technique is proposed in order to study the ELSRS of bipolar devices through the implementation of the project, it not only supported a theoretical basis to improve the space-charge model and develop of competition model, but also provided a methodological guidance for the design and manufacture of domestic radiation hardening devices.
内容类型: 学位论文
URI标识: http://ir.xjipc.cas.cn/handle/365002/2482
Appears in Collections:材料物理与化学研究室_学位论文

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作者单位: 中国科学院新疆理化技术研究所

Recommended Citation:
席善斌. 基于新型双极测试结构的低剂量率辐照感生缺陷研究[D]. 北京. 中国科学院大学. 2013.
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