60Coγ射线对高铝组分Al0.5Ga0.5N基p-i-n日盲型光探测器理想因子的影响
张孝富; 李豫东; 郭旗; 罗木昌; 何承发; 于新; 申志辉; 张兴尧; 邓伟; 吴正新
2013
Source Publication物理学报
ISSN1000-3290
Volume62Issue:7Pages:331-336
Abstract

采用60Coγ射线源对高铝组分Al0.5Ga0.5N盲紫外p-i-n结构光探测器和Si基可见光p-i-n结构探测器进行了累计剂量分别为0.1,1,10Mrad(Si)总剂量辐照实验.实验发现,随着辐照剂量的增加,AlGaN盲紫外p-i-n结构光探测器的理想因子显著增大,辐照后理想因子n>2;而Si基可见光p-i-n结构探测器的理想因子随辐照剂量的变化并不明显.AlGaN盲紫外p-i-n结构光探测器理想因子的退化可能主要是因为欧姆接触性能的退化,Si基可见光p-i-n结构探测器的理想因子的变化则可能是由于敏感层的退化。

Other Abstract

High Al content AlxGa1.xN solar-blind photodetector and Si p-i-n visible light detector were irradiated with 60Co g -rays up to 0.1, 1, 10 Mrad(Si). With the increase of total radiation dose, the ideality factor of AlxGa1.xN p-i-n diode saw a significant rise and the ideality factor n is grater than 2 with a total dose up to 10 Mrad(Si); the ideality factor of Si p-i-n diode, however, changed only slightly even up to 10 Mrad(Si). The degradation of AlxGa1.xN p-i-n diode might be attributed to the deterioration of Ohmic contacts, however, to some extent, the slight increase of the Si p-i-n diode might be due to the degradation of the insensitive layer.

Keyword高铝组分alxga1-xn Γ射线辐射效应 理想因子 欧姆接触
Indexed BySCI ; CSCD
CSCD IDCSCD:4794478
Citation statistics
Cited Times:2[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/2455
Collection新疆维吾尔自治区电子信息材料与器件重点实验室
材料物理与化学研究室
Affiliation中国科学院新疆理化技术研究所;新疆电子信息材料与器件重点实验室;重庆光电技术研究所
Recommended Citation
GB/T 7714
张孝富,李豫东,郭旗,等. 60Coγ射线对高铝组分Al0.5Ga0.5N基p-i-n日盲型光探测器理想因子的影响[J]. 物理学报,2013,62(7):331-336.
APA 张孝富.,李豫东.,郭旗.,罗木昌.,何承发.,...&吴正新.(2013).60Coγ射线对高铝组分Al0.5Ga0.5N基p-i-n日盲型光探测器理想因子的影响.物理学报,62(7),331-336.
MLA 张孝富,et al."60Coγ射线对高铝组分Al0.5Ga0.5N基p-i-n日盲型光探测器理想因子的影响".物理学报 62.7(2013):331-336.
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