不同偏置条件下NPN双极晶体管的电离辐照效应
费武雄; 陆妩; 任迪远; 郑玉展; 王义元; 陈睿; 王志宽; 杨永晖; 李茂顺; 兰博; 崔江维; 赵云
2011
Source Publication原子能科学技术
ISSN1000-6931
Volume45Issue:2Pages:217-222
Abstract

对NPN双极晶体管进行了不同剂量率、不同偏置条件下的电离辐射实验。研究结果表明:同一剂量率辐照时,无论是低剂量率还是高剂量率,辐照损伤均是基-射结反向偏置时最大,零偏置次之,正偏置最小。NPN双极晶体管在3种偏置下均可观察到明显的低剂量率辐照损伤增强(ELDRS)效应,且偏置条件对ELDRS效应很明显,表现为基-射结正向偏置ELDRS效应最为显著,零偏次之,反向偏置最次。对出现这一实验结果的机理进行了探讨。

;

At various dose rates,ionizing radiation response of NPN bipolar transistors at three kinds of base—emitter j unction biases was investigated. The results show that the’radiation damages are most significant at base—emitter j unction reverse bias and mini— m3I at forward bias when irradiated at high or Iow dose rate.Furthermore,the radiation dam age iS m ore severe at low dose rate for the same bias,i.e. enhanced lOW dose rate sensitivity (ELDRS). The influence of base—emitter i unction bias on El DRS effect iS obvious.The ELDRS effect is most significant for base-emitter j unction forward bias,while it is least for reverse bias.The mechanisms of these results were discussed.

KeywordNpn双极晶体管 60coγ辐照 偏置 低剂量率辐照损伤增强
Indexed ByCSCD
CSCD IDCSCD:4153962
Citation statistics
Cited Times:6[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/2452
Collection新疆维吾尔自治区电子信息材料与器件重点实验室
材料物理与化学研究室
Affiliation中国科学院新疆理化技术研究所;新疆电子信息材料与器件重点实验室;中国科学院研究生院;模拟集成电路国家重点实验室
Recommended Citation
GB/T 7714
费武雄,陆妩,任迪远,等. 不同偏置条件下NPN双极晶体管的电离辐照效应[J]. 原子能科学技术,2011,45(2):217-222.
APA 费武雄.,陆妩.,任迪远.,郑玉展.,王义元.,...&赵云.(2011).不同偏置条件下NPN双极晶体管的电离辐照效应.原子能科学技术,45(2),217-222.
MLA 费武雄,et al."不同偏置条件下NPN双极晶体管的电离辐照效应".原子能科学技术 45.2(2011):217-222.
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