XJIPC OpenIR  > 材料物理与化学研究室
Microstructure and electrical properties of doped ZnO varistor nanomaterials
Kang Xueya; Minjing Tu; Ming Zhang; Tiandiao Wang
2004
Conference NameSymposium on Functional Nanomaterials for Optoelectronics and other Applications held at the 2003 E-MRS Fall Meeting
Source PublicationDiffusion and Defect Data Pt.B: Solid State Phenomena
Pages127-132
Conference DateSeptember 15, 2003 - September 19, 2003
Conference PlaceWarsaw Univ Technol, Warsaw, POLAND
Abstract

A sol-gel method of preparation doped ZnO varistor nanomaterials is described, The influences of doped ZnO nanomaterials for varistor microstructure and electrical properties (nonlinear coefficient a, breakdown voltage V lmA, dielectric constant Ε, and dielectric loss tan δ) are investigated. Compared with the conventional mixed oxide technique, varistor ceramic of prepared by nanometer materials showed a more homogeneous microstracture, smaller grain sizes, higher densities and excellent electrical properties.

KeywordZno Varistor Nanomaterial Microstructure Electrical Properties
Indexed ByEI
Document Type会议论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/2395
Collection材料物理与化学研究室
AffiliationChinese Acad Sci, XinJiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China;Hong Ming & UESTC New Mat Co Ltd, Chengdu 610051, Peoples R China
Recommended Citation
GB/T 7714
Kang Xueya,Minjing Tu,Ming Zhang,et al. Microstructure and electrical properties of doped ZnO varistor nanomaterials[C],2004:127-132.
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