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不同剂量率下MOSFET的电离辐照效应
张华林; 陆妩; 任迪远; 余学峰; 郭旗
2007
Conference Name第九届全国抗辐射电子学与电磁脉冲学术年会
Conference Date2007
Conference Place重庆
Abstract

对MOSFET在不同剂量率条件下的电离辐照效应进行了研究。结果显示:在实验的剂量率和总剂量范围内,在各种剂率辐照下,NMOS管和PMOS管的阈电压都出现负漂,且随辐照总剂量的增加而增大;在相同的总剂量时,PMOS管的低剂量率辐照时的阈电压漂移更显著,而NMOS管的则正好相反。

KeywordMosfet 电离辐照 数字集成电路 阈电压漂移
Funding Organization中国核学会
Document Type会议论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/2390
Collection材料物理与化学研究室
Affiliation中国科学院新疆理化技术研究所
Recommended Citation
GB/T 7714
张华林,陆妩,任迪远,等. 不同剂量率下MOSFET的电离辐照效应[C],2007.
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