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不同剂量率下MOSFET的辐照响应和退火行为
陆妩; 任迪远; 郭旗; 余学峰
2008
Conference Name第六届电子产品防护技术研讨会
Conference Date2008
Conference Place贵州安顺
Abstract

本文研究了国产商用MOSFET在0.01.1、50 rad(Si)/s三种剂量率条件下的电离辐照效应及退火特性.结果表明,由于辐照感生的氧化物电荷和界面态在不同剂量率辐照下的贡献不同及性质相异,NMOSFET和PMOSFET显示出不同的响应特性:对于MMOS管,用较高剂量率辐照加室温退火可以预示其低剂量率的辐射损伤,而PMOS管则无法预估其在低剂量率辐照时的损伤明显增大.文中对造成两者明显差异的损伤机理进行了较深入的分析.

Keyword剂量率金氧半场效晶体管 辐照响应 退火行为
Funding Organization中国电子学会
Document Type会议论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/2387
Collection材料物理与化学研究室
Affiliation中国科学院新疆理化技术研究所
Recommended Citation
GB/T 7714
陆妩,任迪远,郭旗,等. 不同剂量率下MOSFET的辐照响应和退火行为[C],2008.
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