对GaAlAs异质结红外发光二极管OP224和NPN型Si光电三极管OP604进行60Coγ射线辐照试验,分析了光电器件在γ射线辐照下氧化物陷阱电荷和界面态陷阱电荷的积累效应,对辐照损伤现象及损伤机理进行分析和探讨.
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