不同偏置对NPN双极晶体管的低剂量率电离辐照损伤的影响
费武雄; 赵云; 王志宽; 杨永晖; 陆妩; 任迪远; 郑玉展; 王义元; 陈睿; 李茂顺; 兰博; 崔江维
2009
Conference Name中国核学会2009年学术年会
Conference Date2009-11-18
Conference Place北京
Abstract

对NPN双极晶体管进行了低剂量率下不同偏置条件(基-射结反向偏置、正向偏置和零偏置)的电离辐射实验.结果表明,不同偏置条件下的低剂量率辐射损伤具有明显差异.基-射结反向偏置时,其过剩基极电流最大,电流增益衰减最为显著.而基-射结正向偏置时,过剩基极电流和电流增益衰减都最小.最后,根据边缘电场,讨论了出现这种结果的内在机制.

KeywordNpn双极晶体管 低剂量率 偏置条件 电离辐照
Funding Organization中国核学会
Document Type会议论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/2339
Collection新疆维吾尔自治区电子信息材料与器件重点实验室
材料物理与化学研究室
Affiliation中国科学院新疆理化技术研究所;新疆电子信息材料与器件重点实验室
Recommended Citation
GB/T 7714
费武雄,赵云,王志宽,等. 不同偏置对NPN双极晶体管的低剂量率电离辐照损伤的影响[C],2009.
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