XJIPC OpenIR  > 材料物理与化学研究室
氧化层厚度对NPN双极晶体管辐射损伤的影响
席善斌; 陆妩; 王志宽; 任迪远; 周东; 文林; 孙静
2011
Conference Name第十七届全国半导体集成电路、硅材料学术会议
Conference Date2011-11-01
Conference Place三亚
Abstract

研究了不同氧化层厚度的两种国产NPN双极晶体管在高低剂量率下的辐射效应和退火特性。结果显示:随着总剂量的增加,晶体管基极电流增大,电流增益下降,且薄氧化层的晶体管比常规厚氧化层的晶体管退化更严重。另外,两种NPN晶体管均表现出明显的低剂量率损伤增强效应,并对各种实验现象的损伤机理进行了分析。

KeywordNpn双极晶体管 辐射效应 氧化层厚度 低剂量率 退火特性
Funding Organization中国电子学会
Document Type会议论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/2315
Collection材料物理与化学研究室
Affiliation中国科学院新疆理化技术研究所;新疆电子信息材料与器件重点实验室;模拟集成电路国家重点实验室
Recommended Citation
GB/T 7714
席善斌,陆妩,王志宽,等. 氧化层厚度对NPN双极晶体管辐射损伤的影响[C],2011.
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