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预先老化对注FnMOS器件辐射可靠性的影响
Alternative Titleeffect of burn-in on irradiation reliablity of fluorinated nmosfet
崔帅; 余学峰; 任迪远; 张华林; 艾尔肯
2005
Source Publication半导体学报
ISSN0253-4177
Volume26Issue:1Pages:111-114
Abstract

对注F和未注FCC4007器件在100℃高温老化后的Co60辐照特性进行了研究.研究发现辐照前的高温老化减少了注F器件在辐照中的界面态陷阱电荷的 积累,但是普通器件辐照前的高温老化在减少辐照中界面态积累的同时却增加了氧化物电荷的积累,损害了器件的可靠性.可见,栅介质中F离子的引入可以明显提 高器件的可靠性.

Other Abstract

The influence of 100"C burn-in before radiation on fluorinated CC4007 nMOS and those no fluorinated is reported. It is found that the burn-in before radiation can reduce the interface-trap in irradiation; but for no fluorinated in irradiation the in-terface-trap is reduced and oxide-trap is increased. The burn-in in 100"C before radiation can reduce the reliability for device no fluorinated. But introducing minute amounts of fluorinate ions can improve the reliability in irradiation.

Keyword预先老化 辐照 注f 可靠性
Subject AreaEngineering (Provided By Thomson Reuters)
Indexed ByCSCD
CSCD IDCSCD:1870788
Citation statistics
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/2238
Collection材料物理与化学研究室
Affiliation中国科学院新疆理化技术研究所
Recommended Citation
GB/T 7714
崔帅,余学峰,任迪远,等. 预先老化对注FnMOS器件辐射可靠性的影响[J]. 半导体学报,2005,26(1):111-114.
APA 崔帅,余学峰,任迪远,张华林,&艾尔肯.(2005).预先老化对注FnMOS器件辐射可靠性的影响.半导体学报,26(1),111-114.
MLA 崔帅,et al."预先老化对注FnMOS器件辐射可靠性的影响".半导体学报 26.1(2005):111-114.
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