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学科主题: Engineering (provided by Thomson Reuters)
题名: 预先老化对注FnMOS器件辐射可靠性的影响
其他题名: effect of burn-in on irradiation reliablity of fluorinated nmosfet
作者: 崔帅; 余学峰; 任迪远; 张华林; 艾尔肯
关键词: 预先老化 ; 辐照 ; 注F ; 可靠性
刊名: Chinese Journal of Semiconductors
发表日期: 2005
卷: 26, 期:1, 页:111-114
摘要: 对注F和未注FCC4007器件在100℃高温老化后的Co60辐照特性进行了研究.研究发现辐照前的高温老化减少了注F器件在辐照中的界面态陷阱电荷的 积累,但是普通器件辐照前的高温老化在减少辐照中界面态积累的同时却增加了氧化物电荷的积累,损害了器件的可靠性.可见,栅介质中F离子的引入可以明显提 高器件的可靠性.
英文摘要: The influence of 100"C burn-in before radiation on fluorinated CC4007 nMOS and those no fluorinated is reported. It is found that the burn-in before radiation can reduce the interface-trap in irradiation; but for no fluorinated in irradiation the in-terface-trap is reduced and oxide-trap is increased. The burn-in in 100"C before radiation can reduce the reliability for device no fluorinated. But introducing minute amounts of fluorinate ions can improve the reliability in irradiation.
内容类型: 期刊论文
URI标识: http://ir.xjipc.cas.cn/handle/365002/2238
Appears in Collections:材料物理与化学研究室_期刊论文

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作者单位: 中国科学院新疆理化技术研究所

Recommended Citation:
崔帅,余学峰,任迪远,等. 预先老化对注FnMOS器件辐射可靠性的影响[J]. Chinese Journal of Semiconductors,2005,26(1):111-114.
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