XJIPC OpenIR  > 材料物理与化学研究室
PMOS场效应晶体管脉冲X射线辐照效应
Alternative Titleradiation effects of pmosfet irradiated by pulse x-ray
靳涛; 杨志安; 杨祖慎; 姚育娟; 罗伊虹
2005
Source Publication核技术
ISSN0253-3219
Volume28Issue:2Pages:105-108
Abstract

根据 P 沟道金属氧化物场效应晶体管 (PMOSFET) 在低能脉冲 X 射线辐照下的实验结果、结合PMOSFET 实验样品的结构分析了阈电压漂移产生的机理。

Other Abstract

The PMOSFET was irradiated by low energy pulse X-rays and its threshold voltage was continuously measured. Based on the experimental results and the structure of PMOSFET, mechanism of the threshold shift was discussed.

Keyword脉冲x射线 场效应晶体管 辐射效应
Subject AreaPhysics (Provided By Thomson Reuters)
Indexed ByCSCD
CSCD IDCSCD:1912472
Citation statistics
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/2223
Collection材料物理与化学研究室
Affiliation中国科学院新疆理化技术研究所;新疆大学物理系;西北核技术研究所
Recommended Citation
GB/T 7714
靳涛,杨志安,杨祖慎,等. PMOS场效应晶体管脉冲X射线辐照效应[J]. 核技术,2005,28(2):105-108.
APA 靳涛,杨志安,杨祖慎,姚育娟,&罗伊虹.(2005).PMOS场效应晶体管脉冲X射线辐照效应.核技术,28(2),105-108.
MLA 靳涛,et al."PMOS场效应晶体管脉冲X射线辐照效应".核技术 28.2(2005):105-108.
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