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A novel technique for predicting ionizing radiation effects of commercial MOS devices
Zhang Guo-Qiang; Guo Qi; Erkin; Lu Wu; Ren Di-Yuan
2004
发表期刊Chinese Physics
ISSN10091963
卷号13期号:6页码:948-953
摘要A nondestructive selection technique for predicting ionizing radiation effects of commercial metal-oxide-semiconductor (MOS) devices has been put forward. The basic principle and application details of this technique have been discussed, Practical application for the 54HC04 and 54HC08 circuits has shown that the predicted radiation-sensitive parameters such as threshold voltage, static power supply current and radiation failure total dose are consistent with the experimental results obtained only by measuring original electrical parameters. It is important and necessary to choose suitable information parameters. This novel technique can be used for initial radiation selection of some commercial MOS devices.
DOI10.1088/1009-1963/13/6/028
收录类别EI
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文献类型期刊论文
条目标识符http://ir.xjipc.cas.cn/handle/365002/2219
专题材料物理与化学研究室
作者单位Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083, China;Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China
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Zhang Guo-Qiang,Guo Qi,Erkin,et al. A novel technique for predicting ionizing radiation effects of commercial MOS devices[J]. Chinese Physics,2004,13(6):948-953.
APA Zhang Guo-Qiang,Guo Qi,Erkin,Lu Wu,&Ren Di-Yuan.(2004).A novel technique for predicting ionizing radiation effects of commercial MOS devices.Chinese Physics,13(6),948-953.
MLA Zhang Guo-Qiang,et al."A novel technique for predicting ionizing radiation effects of commercial MOS devices".Chinese Physics 13.6(2004):948-953.
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