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题名: A novel technique for predicting ionizing radiation effects of commercial MOS devices
作者: Zhang Guo-Qiang; Guo Qi; Erkin; Lu Wu; Ren Di-Yuan
刊名: Chinese Physics
发表日期: 2004
DOI: 10.1088/1009-1963/13/6/028
卷: 13, 期:6, 页:948-953
收录类别: EI
摘要: A nondestructive selection technique for predicting ionizing radiation effects of commercial metal-oxide-semiconductor (MOS) devices has been put forward. The basic principle and application details of this technique have been discussed, Practical application for the 54HC04 and 54HC08 circuits has shown that the predicted radiation-sensitive parameters such as threshold voltage, static power supply current and radiation failure total dose are consistent with the experimental results obtained only by measuring original electrical parameters. It is important and necessary to choose suitable information parameters. This novel technique can be used for initial radiation selection of some commercial MOS devices.
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内容类型: 期刊论文
URI标识: http://ir.xjipc.cas.cn/handle/365002/2219
Appears in Collections:材料物理与化学研究室_期刊论文

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作者单位: Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083, China;Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China

Recommended Citation:
Zhang Guo-Qiang,Guo Qi,Erkin,et al. A novel technique for predicting ionizing radiation effects of commercial MOS devices[J]. Chinese Physics,2004,13(6):948-953.
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