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双极晶体管的低剂量率电离辐射效应
Alternative Titlelow dose rate ionizing radiation response of bipolar transistors
张华林; 陆妩; 任迪远; 郭旗; 余学锋; 何承发; 艾尔肯; 崔帅
2004
Source Publication半导体学报
ISSN0253-4177
Volume25Issue:12Pages:1675-1679
Abstract

通过对 npn管和 pnp管进行不同剂量率的电离辐射实验 ,研究了双极晶体管的低剂量率辐射效应 .结果表明 ,双极晶体管在低剂量率辐照下电流增益下降更为显著 ,这是由于低剂量率辐照在氧化层中感生了更多的净氧化物正电荷浓度 ,致使低剂量率下过量基极电流明显增大 .而辐照后 npn管比 pnp管具有更大的有效表面复合面积 ,致使前者比后者有更大的表面复合电流 ,从而导致了在各种剂量率辐照下 ,npn管比 pnp管对电离辐射都更为敏感 .

Other Abstract

The effect of low dose rate ionizing radiation is investigated for npn and pnp transistors which are sensitive to the en-hanced low dose rate damage. The results show that the current gain degradation of bipolar transistors is larger at low dose-rate than high dose-rate,and npn transistor is more sensitive than pnp transistor. Possible mechanisms for enhanced damage are discussed.

Keyword低剂量率 电离辐射 双极晶体管 空间电荷
Subject AreaEngineering (Provided By Thomson Reuters)
Indexed ByCSCD
CSCD IDCSCD:1774567
Citation statistics
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/2208
Collection材料物理与化学研究室
Affiliation中国科学院新疆理化技术研究所
Recommended Citation
GB/T 7714
张华林,陆妩,任迪远,等. 双极晶体管的低剂量率电离辐射效应[J]. 半导体学报,2004,25(12):1675-1679.
APA 张华林.,陆妩.,任迪远.,郭旗.,余学锋.,...&崔帅.(2004).双极晶体管的低剂量率电离辐射效应.半导体学报,25(12),1675-1679.
MLA 张华林,et al."双极晶体管的低剂量率电离辐射效应".半导体学报 25.12(2004):1675-1679.
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