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掺锰对不同导电类型硅材料热敏特性的影响
Alternative Titlethe effect of mn-doping on the thermo-sensitive characteristics of different si materials
张建; 巴维真; 陈朝阳; 崔志明; 蔡志军; 丛秀云; 陶明德; 吐尔迪·吾买尔
2004
Source Publication电子元件与材料
ISSN1001-2028
Volume23Issue:6Pages:23-24
Abstract

采用电阻率为5 ·cm的p型单晶硅和n型单晶硅,通过高温扩散金属锰的方法,可得到两种类型的热敏材料。测试发现,选择适当的扩散温度和时间,这两种类型的热敏材料一致性都较好。对n型硅掺锰,得到的是小正温度系数热敏材料,其B值在620 K左右;对p型硅掺锰,得到的是负温度系数热敏材料,其B值在4 200 ~4300 K之间。

Other Abstract

Two different thermo-sensitive materials are acquired by diffusing metal Mn into p-type Si monocrystal of 5Omega · cm and n-type Si monocrystal at high temperature. The measurment results indicate that their coherence is good when diffusing temperature and time is proper. Materials of low PTC can be obtained by diffusing Mn into n-type Si. Its B-value is about 620 K; and NTC materials can be acquired by doping Mn into p-type Si. Its B-value is 4 200~4300 K.

Keyword掺锰 热敏特性 正温度系数 负温度系数
Subject AreaEngineering (Provided By Thomson Reuters)
DOI10.14106/j.cnki.1001-2028.2004.06.009
Indexed ByCSCD
CSCD IDCSCD:1662812
Citation statistics
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/2192
Collection材料物理与化学研究室
Affiliation中国科学院新疆理化技术研究所
Recommended Citation
GB/T 7714
张建,巴维真,陈朝阳,等. 掺锰对不同导电类型硅材料热敏特性的影响[J]. 电子元件与材料,2004,23(6):23-24.
APA 张建.,巴维真.,陈朝阳.,崔志明.,蔡志军.,...&吐尔迪·吾买尔.(2004).掺锰对不同导电类型硅材料热敏特性的影响.电子元件与材料,23(6),23-24.
MLA 张建,et al."掺锰对不同导电类型硅材料热敏特性的影响".电子元件与材料 23.6(2004):23-24.
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