| 掺锰对不同导电类型硅材料热敏特性的影响 | |
| Alternative Title | the effect of mn-doping on the thermo-sensitive characteristics of different si materials |
| 张建; 巴维真; 陈朝阳; 崔志明; 蔡志军; 丛秀云; 陶明德; 吐尔迪·吾买尔 | |
| 2004 | |
| Source Publication | 电子元件与材料
 |
| ISSN | 1001-2028 |
| Volume | 23Issue:6Pages:23-24 |
| Abstract | 采用电阻率为5 ·cm的p型单晶硅和n型单晶硅,通过高温扩散金属锰的方法,可得到两种类型的热敏材料。测试发现,选择适当的扩散温度和时间,这两种类型的热敏材料一致性都较好。对n型硅掺锰,得到的是小正温度系数热敏材料,其B值在620 K左右;对p型硅掺锰,得到的是负温度系数热敏材料,其B值在4 200 ~4300 K之间。 |
| Other Abstract | Two different thermo-sensitive materials are acquired by diffusing metal Mn into p-type Si monocrystal of 5Omega · cm and n-type Si monocrystal at high temperature. The measurment results indicate that their coherence is good when diffusing temperature and time is proper. Materials of low PTC can be obtained by diffusing Mn into n-type Si. Its B-value is about 620 K; and NTC materials can be acquired by doping Mn into p-type Si. Its B-value is 4 200～4300 K. |
| Keyword | 掺锰 热敏特性 正温度系数 负温度系数 |
| Subject Area | Engineering (Provided By Thomson Reuters) |
| DOI | 10.14106/j.cnki.1001-2028.2004.06.009 |
| Indexed By | CSCD |
| CSCD ID | CSCD:1662812 |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.xjipc.cas.cn/handle/365002/2192 |
| Collection | 材料物理与化学研究室 |
| Affiliation | 中国科学院新疆理化技术研究所 |
| Recommended Citation GB/T 7714 | 张建,巴维真,陈朝阳,等. 掺锰对不同导电类型硅材料热敏特性的影响[J]. 电子元件与材料,2004,23(6):23-24. |
| APA | 张建.,巴维真.,陈朝阳.,崔志明.,蔡志军.,...&吐尔迪·吾买尔.(2004).掺锰对不同导电类型硅材料热敏特性的影响.电子元件与材料,23(6),23-24. |
| MLA | 张建,et al."掺锰对不同导电类型硅材料热敏特性的影响".电子元件与材料 23.6(2004):23-24. |
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| 掺锰对不同导电类型硅材料热敏特性的影响.（68KB） | 期刊论文 | 作者接受稿 | 开放获取 | CC BY-NC-SA | View Application Full Text | |
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