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补偿硅的温度敏感特性
Alternative Titlecompensated silicon: thermal-sensitive characteristic
张建; 巴维真; 陈朝阳; 丛秀云; 陶明德; M.K.巴哈迪尔哈诺夫
2004
Source Publication电子元件与材料
ISSN1001-2028
Volume23Issue:5Pages:23-24,28
Abstract

采用低电阻车的p型单晶硅,在高温条件下扩散金属锰的方法,可以得到高补偿和过补偿硅。在常温下,测试扩散后电阻率分别为3.2×10~3、4.8×10~4、1.3×10~5、3.2×10~5Ω·cm的几种样品的温度敏感特性,其相应的B值分别为5103,5600,6103,6502 K。这种扩锰硅是一种温度敏感材料,笔者将报道这些实验结果并讨论其热敏特性。

Other Abstract

High compensated silicon and over compensated silicon were acquired by diffiusing Mn-metal into p-type silicon of low resistivity at high temperature. The acquired samples of resistivity of 3.2*10~3Omega ?cm, 4.8*10~4Omega ?, 1.3*10~5Omega ?, 3.2xl0~5Omega ? cm are measured. Their B-values are 5 103, 5 600, 6 103, 6 502 K, respectively. The compensated silicon is very sensitive to ambient temperature.

Keyword补偿硅 高补偿 过补偿 温敏特性
Subject AreaEngineering (Provided By Thomson Reuters)
DOI10.14106/j.cnki.1001-2028.2004.05.008
Indexed ByCSCD
CSCD IDCSCD:1661411
Citation statistics
Cited Times:12[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/2191
Collection材料物理与化学研究室
Affiliation中国科学院新疆理化技术研究所;塔什干国立技术大学
Recommended Citation
GB/T 7714
张建,巴维真,陈朝阳,等. 补偿硅的温度敏感特性[J]. 电子元件与材料,2004,23(5):23-24,28.
APA 张建,巴维真,陈朝阳,丛秀云,陶明德,&M.K.巴哈迪尔哈诺夫.(2004).补偿硅的温度敏感特性.电子元件与材料,23(5),23-24,28.
MLA 张建,et al."补偿硅的温度敏感特性".电子元件与材料 23.5(2004):23-24,28.
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