High compensated silicon and over compensated silicon were acquired by diffiusing Mn-metal into p-type silicon of low resistivity at high temperature. The acquired samples of resistivity of 3.2*10~3Omega ?cm, 4.8*10~4Omega ?, 1.3*10~5Omega ?, 3.2xl0~5Omega ? cm are measured. Their B-values are 5 103, 5 600, 6 103, 6 502 K, respectively. The compensated silicon is very sensitive to ambient temperature.