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高补偿硅的光敏感特性
Alternative Titlehighly compensated si:light-sensitive characteristic
张建; 巴维真; 陈朝阳; 丛秀云; 陶明德; M.K.巴哈迪尔哈诺夫
2004
Source Publication电子元件与材料
ISSN1001-2028
Volume23Issue:3Pages:20-22
Abstract

对电阻率为5 ·cm的p型单晶硅,在高温条件下采用扩散金属锰的方法,得到高补偿硅。并在室温(25℃)和液氮温度(196℃)下,测试了这种高补偿硅材料对光强的敏感性。测试结果表明:这种材料是一种光敏感材料,其敏感性受外加的电压、样品的温度及补偿后样品的电阻率影响。

Other Abstract

Highly compensated Si were acquired by diffusing Mn into p-type silicon crystal of 5 Q. o cm at high temperature.It's light-sensitive characteristic was measured at 25°C and -196"C. The measurement results show that obtained materials are sensitive to light and the sensitivity is affected by applied voltage, sample temperature and their resistivity.

KeywordP型单晶硅 掺杂锰 高补偿硅 光敏感特性
Subject AreaEngineering (Provided By Thomson Reuters)
DOI10.14106/j.cnki.1001-2028.2004.03.007
Indexed ByCSCD
CSCD IDCSCD:1621375
Citation statistics
Cited Times:2[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/2187
Collection材料物理与化学研究室
Affiliation中国科学院新疆理化技术研究所;塔什干国立技术大学
Recommended Citation
GB/T 7714
张建,巴维真,陈朝阳,等. 高补偿硅的光敏感特性[J]. 电子元件与材料,2004,23(3):20-22.
APA 张建,巴维真,陈朝阳,丛秀云,陶明德,&M.K.巴哈迪尔哈诺夫.(2004).高补偿硅的光敏感特性.电子元件与材料,23(3),20-22.
MLA 张建,et al."高补偿硅的光敏感特性".电子元件与材料 23.3(2004):20-22.
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