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双极晶体管不同剂量率的辐射效应和退火特性
Alternative Titleradiation effects and ageing characteristics of bipolar junction transistors subjected to high and low dose rate total dose irradiations
陆妩; 余学锋; 任迪远; 艾尔肯; 郭旗
2005
Source Publication核技术
ISSN0253-3219
Volume28Issue:12Pages:925-928
Abstract

对不同类型和型号的国产及进口双极晶体管的不同剂量率的辐照效应及退火特性进行了研究。结果表明:在辐照的剂量率范围内,无论是国产还是进口的双极晶体管,都有明显的低剂量率辐照损伤增强现象,且NPN管比PNP管的明显。文中对引起双极器件辐照损伤差异的机理进行了探讨。

Other Abstract

Radiation effects and ageing characteristics were investigated for different types of domestic and/or imported bipolar junction transistors with five dose rates ranging from 100 to 0.002 rad(Si)/s at the same total dose. The results showed that the enhanced low-dose-rate sensitivity (ELDRS) exists in either domestic or imported bipolar transistors, and the NPN transistors are more obvious than PNP ones. Possible mechanism for the effect was discussed.

Keyword双极晶体管 60coγ辐照 剂量率效应 退火
Subject AreaEngineering (Provided By Thomson Reuters)
Indexed ByCSCD
CSCD IDCSCD:2045348
Citation statistics
Cited Times:10[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/2173
Collection材料物理与化学研究室
Affiliation中国科学院新疆理化技术研究所
Recommended Citation
GB/T 7714
陆妩,余学锋,任迪远,等. 双极晶体管不同剂量率的辐射效应和退火特性[J]. 核技术,2005,28(12):925-928.
APA 陆妩,余学锋,任迪远,艾尔肯,&郭旗.(2005).双极晶体管不同剂量率的辐射效应和退火特性.核技术,28(12),925-928.
MLA 陆妩,et al."双极晶体管不同剂量率的辐射效应和退火特性".核技术 28.12(2005):925-928.
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