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CMOS运算放大器的辐照和退火行为
Alternative Titleradiating and annealing on cmos operation amplifier
任迪远; 陆妩; 郭旗; 余学锋; 王明刚; 胡浴红; 赵文魁
2004
Source Publication半导体学报
ISSN0253-4177
Volume25Issue:6Pages:731-734
Abstract

介绍了CMOS运算放大器电路经电离辐照后,在不同偏置及不同退火温度下,运放整体性能参数、电路内部单管特性及功能单元电路的节点电流、电压的变化规律 ,分析了引起运放辐照后继续损伤退化的基本原因.结果显示,运放电路辐照后的退火行为与偏置及温度均有较大的依赖关系,而这种关系与辐照感生的氧化物电荷 和Si/SiO2界面态密度的增长与退火直接相关.

Other Abstract

The behavior of the CMOS op-amps exposed to the ionizing radiation and annealing characteristic after irradiation in different biases and temperature are described. The tested characteristics include all electrical parameters of op-amps and inner transistor,and the current and voltage of the nodes of the subsidiary circuits. The change of radiation-induced oxide trapped charge and Si/SiO2 interface state density depends on the annealing biases and temperature in quite extent.

KeywordCmos运算放大器 电离辐射 退火
Subject AreaEngineering (Provided By Thomson Reuters)
Indexed ByCSCD
CSCD IDCSCD:1693414
Citation statistics
Cited Times:4[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/2169
Collection材料物理与化学研究室
Affiliation中国科学院新疆理化技术研究所;西安微电子技术研究所
Recommended Citation
GB/T 7714
任迪远,陆妩,郭旗,等. CMOS运算放大器的辐照和退火行为[J]. 半导体学报,2004,25(6):731-734.
APA 任迪远.,陆妩.,郭旗.,余学锋.,王明刚.,...&赵文魁.(2004).CMOS运算放大器的辐照和退火行为.半导体学报,25(6),731-734.
MLA 任迪远,et al."CMOS运算放大器的辐照和退火行为".半导体学报 25.6(2004):731-734.
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