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80C31单片机电路总剂量效应研究
Alternative Titlean investigation into total dose effects on 80c31 microcontroller
匡治兵; 郭旗; 任迪远; 李爱武; 汪东
2005
Source Publication微电子学
ISSN1004-3365
Volume35Issue:6Pages:584-586,590
Abstract

研究了80C31单片机电路在60Coγ辐照环境中的响应特性及参数变化规律,通过对辐照后其电离辐照敏感参数在室温和100℃高温条件下随时间变化关系的分析,讨论了电路总剂量辐射损伤的机理。

Other Abstract

Effects of ionizing radiation on 80C31 microcontroller were investigated. Its response characteristics and parameter variation under total dose irradiation were studied. Furthermore, results of post-irradiation annealing test at room- and high-temperature (100 ℃) were analyzed, and failure mechanisms caused by total dose radiation were discussed.

Keyword单片机 60coγ辐照 辐射损伤 退火
Subject AreaEngineering (Provided By Thomson Reuters)
Indexed ByCSCD
CSCD IDCSCD:2198452
Citation statistics
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/2168
Collection材料物理与化学研究室
Affiliation中国科学院新疆理化技术研究所;中国科学院研究生院
Recommended Citation
GB/T 7714
匡治兵,郭旗,任迪远,等. 80C31单片机电路总剂量效应研究[J]. 微电子学,2005,35(6):584-586,590.
APA 匡治兵,郭旗,任迪远,李爱武,&汪东.(2005).80C31单片机电路总剂量效应研究.微电子学,35(6),584-586,590.
MLA 匡治兵,et al."80C31单片机电路总剂量效应研究".微电子学 35.6(2005):584-586,590.
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