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学科主题: Engineering (provided by Thomson Reuters)
题名:
80C31单片机电路总剂量效应研究
其他题名: an investigation into total dose effects on 80c31 microcontroller
作者: 匡治兵; 郭旗; 任迪远; 李爱武; 汪东
关键词: 单片机 ; 60Coγ辐照 ; 辐射损伤 ; 退火
刊名: 微电子学
发表日期: 2005
卷: 35, 期:6, 页:584-586,590
摘要: 研究了80C31单片机电路在60Coγ辐照环境中的响应特性及参数变化规律,通过对辐照后其电离辐照敏感参数在室温和100℃高温条件下随时间变化关系的分析,讨论了电路总剂量辐射损伤的机理。
英文摘要: Effects of ionizing radiation on 80C31 microcontroller were investigated. Its response characteristics and parameter variation under total dose irradiation were studied. Furthermore, results of post-irradiation annealing test at room- and high-temperature (100 ℃) were analyzed, and failure mechanisms caused by total dose radiation were discussed.
内容类型: 期刊论文
URI标识: http://ir.xjipc.cas.cn/handle/365002/2168
Appears in Collections:材料物理与化学研究室_期刊论文

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作者单位: 中国科学院新疆理化技术研究所;中国科学院研究生院

Recommended Citation:
匡治兵,郭旗,任迪远,等. 80C31单片机电路总剂量效应研究[J]. 微电子学,2005-01-01,35(6):584-586,590.
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文件名: 80C31单片机电路总剂量效应研究.pdf
格式: Adobe PDF
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