XJIPC OpenIR  > 材料物理与化学研究室
JFET输入运算放大器不同剂量率的辐照和退火特性
Alternative Titleradiation effects and annealing characteristics of bi-jfet operational amplifiers at different dose rates
陆妩; 任迪远; 郭旗; 余学峰; 艾尔肯
2005
Source Publication核技术
ISSN0253-3219
Volume28Issue:10Pages:755-760
Abstract

本文对几种不同型号的JFET输入双极运算放大器在不同剂量率(1、0.1、0.01及10-4、6.4×10-5Gy(Si)/s)辐照下的响应规律及随时间变化的退火特性进行了研究。结果显示,由于制作工艺相异,不同型号JFET输入双极运放对不同的剂量率辐照也表现出响应差异,但总的来说可分为三大类:第一类明显具有低剂量率辐照损伤增强效应,但同时又有时间效应的关系;第二类虽有不同剂量率的辐照损伤的差异,但这种差异可通过相同时间的室温退火来消除;第三类无剂量率效应,但有明显的“后损伤”现象。文中对引起电路辐照损伤差异的机理进行了探讨。

Other Abstract

Radiation effects and annealing characteristics have been investigated for different types of bipolar operational amplifier with JFET differential pair input at five dose rates ranging from 1 to 6.4 × 10-5 Gy (Si)/s for the same total doses. The results show that the effects vary with the type of devices in the given dose rates, one of which only has the time dependent effects (IDE), two of which not only have the TDE, but also the enhanced low dose rate sensitivity (ELDRS), and the last one shows that there is no difference when the IC was irradiated at different dose rates, but there exists the effect of "post-radiation damage" as annealing at room temperature. Possible mechanisms for these effects are discussed.

KeywordJfet输入双极运算放大器 60coγ辐照 剂量率效应 退火
Subject AreaEngineering (Provided By Thomson Reuters)
Indexed ByCSCD
CSCD IDCSCD:2182408
Citation statistics
Cited Times:1[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/2156
Collection材料物理与化学研究室
Affiliation中国科学院新疆理化技术研究所
Recommended Citation
GB/T 7714
陆妩,任迪远,郭旗,等. JFET输入运算放大器不同剂量率的辐照和退火特性[J]. 核技术,2005,28(10):755-760.
APA 陆妩,任迪远,郭旗,余学峰,&艾尔肯.(2005).JFET输入运算放大器不同剂量率的辐照和退火特性.核技术,28(10),755-760.
MLA 陆妩,et al."JFET输入运算放大器不同剂量率的辐照和退火特性".核技术 28.10(2005):755-760.
Files in This Item:
File Name/Size DocType Version Access License
JFET输入运算放大器不同剂量率的辐照和(209KB)期刊论文作者接受稿开放获取CC BY-NC-SAView Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[陆妩]'s Articles
[任迪远]'s Articles
[郭旗]'s Articles
Baidu academic
Similar articles in Baidu academic
[陆妩]'s Articles
[任迪远]'s Articles
[郭旗]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[陆妩]'s Articles
[任迪远]'s Articles
[郭旗]'s Articles
Terms of Use
No data!
Social Bookmark/Share
File name: JFET输入运算放大器不同剂量率的辐照和退火特性.pdf
Format: Adobe PDF
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.