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Alternative Titleradiation effects and annealing characteristics of bi-jfet operational amplifiers at different dose rates
陆妩; 任迪远; 郭旗; 余学峰; 艾尔肯
Source Publication核技术


Other Abstract

Radiation effects and annealing characteristics have been investigated for different types of bipolar operational amplifier with JFET differential pair input at five dose rates ranging from 1 to 6.4 × 10-5 Gy (Si)/s for the same total doses. The results show that the effects vary with the type of devices in the given dose rates, one of which only has the time dependent effects (IDE), two of which not only have the TDE, but also the enhanced low dose rate sensitivity (ELDRS), and the last one shows that there is no difference when the IC was irradiated at different dose rates, but there exists the effect of "post-radiation damage" as annealing at room temperature. Possible mechanisms for these effects are discussed.

KeywordJfet输入双极运算放大器 60coγ辐照 剂量率效应 退火
Subject AreaEngineering (Provided By Thomson Reuters)
Indexed ByCSCD
Citation statistics
Cited Times:1[CSCD]   [CSCD Record]
Document Type期刊论文
Recommended Citation
GB/T 7714
陆妩,任迪远,郭旗,等. JFET输入运算放大器不同剂量率的辐照和退火特性[J]. 核技术,2005,28(10):755-760.
APA 陆妩,任迪远,郭旗,余学峰,&艾尔肯.(2005).JFET输入运算放大器不同剂量率的辐照和退火特性.核技术,28(10),755-760.
MLA 陆妩,et al."JFET输入运算放大器不同剂量率的辐照和退火特性".核技术 28.10(2005):755-760.
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