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Zn掺杂n型硅材料的补偿研究
Alternative Titlecompensation study of zn doped n-type silicon materials
蔡志军; 巴维真; 陈朝阳; 崔志明; 丛秀云
2005
Source Publication电子元件与材料
ISSN1001-2028
Volume24Issue:6Pages:24-26
Abstract

为了获得不同补偿度的硅材料,采用高温气相扩散的方法,在n型硅中掺杂深能级杂质Zn,得到各种电阻率(在25℃下)的补偿硅。实验表明,对具有不同初始电阻率的硅材料,扩散后电阻率随扩散温度和杂质投入量的不同都有较大变化,而且随杂质投入量的增加,电阻率都有一个急剧变化的转折点。

Other Abstract

In order to obtain compensated silicon having different compensation degrees, deep level Zn impurities were doped in n-type silicon using high temperature gaseous diffusion method. Compensated silicon materials having various resistivities (at 25"C) were obtained. It is show that resistivities after diffusion vary significantly with the increase of diffusion temperature and the quantity of diffusant for the materials having different initial resistivities. There is a turning point, where resistivity varies rapidly with the increase of diffusant quantity.

Keyword电子技术 深能级杂质 反型 固溶度 亨利定律 电离
Subject AreaEngineering (Provided By Thomson Reuters)
DOI10.14106/j.cnki.1001-2028.2005.06.008
Indexed ByCSCD
CSCD IDCSCD:2102853
Citation statistics
Cited Times:3[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/2139
Collection材料物理与化学研究室
Affiliation中国科学院新疆理化技术研究所;中国科学院研究生院
Recommended Citation
GB/T 7714
蔡志军,巴维真,陈朝阳,等. Zn掺杂n型硅材料的补偿研究[J]. 电子元件与材料,2005,24(6):24-26.
APA 蔡志军,巴维真,陈朝阳,崔志明,&丛秀云.(2005).Zn掺杂n型硅材料的补偿研究.电子元件与材料,24(6),24-26.
MLA 蔡志军,et al."Zn掺杂n型硅材料的补偿研究".电子元件与材料 24.6(2005):24-26.
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