In order to obtain mono-crystal silicon thermistor material having high B-value, deep energy level impurity Zn is doped into n-type silicon using a high temperature gas phase diffusion method. Highly compensated silicon material is obtained. The characteristics of the material are measured and analyzed. It is shown that the compensated silicon material has thermally sensitive characteristics. The B-constant of the material is about 6300 K and the resistance-temperature relationship of the material depends on the compensation degree of impurities.