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学科主题: Engineering (provided by Thomson Reuters)
题名: 深能级杂质Zn对n型硅半导体的补偿特性
其他题名: compensation characteristics of deep energy level impurity zn to n-type silicon
作者: 蔡志军; 巴维真; 陈朝阳; 崔志明; 丛秀云
关键词: 深能级杂质 ; 费米能级 ; 多数载流子 ; 补偿度
刊名: 半导体学报
发表日期: 2005
卷: 26, 期:6, 页:1140-1143
资助者: 中国科学院“西部之光”资助项目
摘要: 为得到高B值(材料常数)的单晶热敏材料,采用高温气相扩散的方法在n型硅中掺杂深能级杂质Zn,得到高补偿的硅材料,并对该材料特性进行了测试和分析.结果表明:这种补偿硅具有热敏特性,该材料的B值为6300K左右,其阻值对温度的依赖关系与杂质的补偿程度有关.
英文摘要: In order to obtain mono-crystal silicon thermistor material having high B-value, deep energy level impurity Zn is doped into n-type silicon using a high temperature gas phase diffusion method. Highly compensated silicon material is obtained. The characteristics of the material are measured and analyzed. It is shown that the compensated silicon material has thermally sensitive characteristics. The B-constant of the material is about 6300 K and the resistance-temperature relationship of the material depends on the compensation degree of impurities.
内容类型: 期刊论文
URI标识: http://ir.xjipc.cas.cn/handle/365002/2135
Appears in Collections:材料物理与化学研究室_期刊论文

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作者单位: 中国科学院新疆理化技术研究所

Recommended Citation:
蔡志军,巴维真,陈朝阳,等. 深能级杂质Zn对n型硅半导体的补偿特性[J]. 半导体学报,2005,26(6):1140-1143.
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文件名: 深能级杂质Zn对n型硅半导体的补偿特性.pdf
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