XJIPC OpenIR  > 材料物理与化学研究室
深能级杂质Zn对n型硅半导体的补偿特性
Alternative Titlecompensation characteristics of deep energy level impurity zn to n-type silicon
蔡志军; 巴维真; 陈朝阳; 崔志明; 丛秀云
2005
Source Publication半导体学报
ISSN0253-4177
Volume26Issue:6Pages:1140-1143
Abstract

为得到高B值(材料常数)的单晶热敏材料,采用高温气相扩散的方法在n型硅中掺杂深能级杂质Zn,得到高补偿的硅材料,并对该材料特性进行了测试和分析.结果表明:这种补偿硅具有热敏特性,该材料的B值为6300K左右,其阻值对温度的依赖关系与杂质的补偿程度有关.

Other Abstract

In order to obtain mono-crystal silicon thermistor material having high B-value, deep energy level impurity Zn is doped into n-type silicon using a high temperature gas phase diffusion method. Highly compensated silicon material is obtained. The characteristics of the material are measured and analyzed. It is shown that the compensated silicon material has thermally sensitive characteristics. The B-constant of the material is about 6300 K and the resistance-temperature relationship of the material depends on the compensation degree of impurities.

Keyword深能级杂质 费米能级 多数载流子 补偿度
Subject AreaEngineering (Provided By Thomson Reuters)
Indexed ByCSCD
CSCD IDCSCD:2091726
Citation statistics
Cited Times:5[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/2135
Collection材料物理与化学研究室
Affiliation中国科学院新疆理化技术研究所
Recommended Citation
GB/T 7714
蔡志军,巴维真,陈朝阳,等. 深能级杂质Zn对n型硅半导体的补偿特性[J]. 半导体学报,2005,26(6):1140-1143.
APA 蔡志军,巴维真,陈朝阳,崔志明,&丛秀云.(2005).深能级杂质Zn对n型硅半导体的补偿特性.半导体学报,26(6),1140-1143.
MLA 蔡志军,et al."深能级杂质Zn对n型硅半导体的补偿特性".半导体学报 26.6(2005):1140-1143.
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