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Alternative Titlecompensation characteristics of deep energy level impurity zn to n-type silicon
蔡志军; 巴维真; 陈朝阳; 崔志明; 丛秀云
Source Publication半导体学报


Other Abstract

In order to obtain mono-crystal silicon thermistor material having high B-value, deep energy level impurity Zn is doped into n-type silicon using a high temperature gas phase diffusion method. Highly compensated silicon material is obtained. The characteristics of the material are measured and analyzed. It is shown that the compensated silicon material has thermally sensitive characteristics. The B-constant of the material is about 6300 K and the resistance-temperature relationship of the material depends on the compensation degree of impurities.

Keyword深能级杂质 费米能级 多数载流子 补偿度
Subject AreaEngineering (Provided By Thomson Reuters)
Indexed ByCSCD
Citation statistics
Cited Times:5[CSCD]   [CSCD Record]
Document Type期刊论文
Recommended Citation
GB/T 7714
蔡志军,巴维真,陈朝阳,等. 深能级杂质Zn对n型硅半导体的补偿特性[J]. 半导体学报,2005,26(6):1140-1143.
APA 蔡志军,巴维真,陈朝阳,崔志明,&丛秀云.(2005).深能级杂质Zn对n型硅半导体的补偿特性.半导体学报,26(6),1140-1143.
MLA 蔡志军,et al."深能级杂质Zn对n型硅半导体的补偿特性".半导体学报 26.6(2005):1140-1143.
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