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AlGaN/GaN异质结辐射感生界面态电荷对二维电子气输运的影响
Alternative Titleeffect of irradiation induced heterointerface state charges on 2deg transport property in algan/gan heterostructures
范隆; 李培咸; 郝跃
2003
Source Publication半导体学报
ISSN0253-4177
Volume24Issue:9Pages:937-941
Abstract

根据荷电中心与自由载流子间的库仑散射作用 ,给出了异质结辐射感生界面态电荷对二维电子气 (2DEG)迁移率的散射模型 .计算了在不同沟道电子面密度下 ,界面态电荷密度与其所限制的迁移率之间的关系 .运用马德森定则分析了辐射感生界面态电荷散射对总迁移率的影响 .分析表明 ,辐射感生界面态电荷在累积到一定量后 ,会显著影响迁移率 ,一定程度上提高 2DEG密度能抑制界面态电荷散射的作用

KeywordAlgan/gan异质结 辐射 界面态电荷 二维电子气 迁移率
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/2124
Collection材料物理与化学研究室
Affiliation西安电子科技大学微电子所;中国科学院新疆理化技术研究所
Recommended Citation
GB/T 7714
范隆,李培咸,郝跃. AlGaN/GaN异质结辐射感生界面态电荷对二维电子气输运的影响[J]. 半导体学报,2003,24(9):937-941.
APA 范隆,李培咸,&郝跃.(2003).AlGaN/GaN异质结辐射感生界面态电荷对二维电子气输运的影响.半导体学报,24(9),937-941.
MLA 范隆,et al."AlGaN/GaN异质结辐射感生界面态电荷对二维电子气输运的影响".半导体学报 24.9(2003):937-941.
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