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不同注F剂量与CMOS运放电路辐照损伤的相关性
Alternative Titlerelativity of radiation damage in fluorinated cmos operational amplifiers
任迪远; 陆妩; 余学锋; 郭旗; 张国强; 胡浴红; 王明刚; 赵文魁
2003
Source Publication半导体学报
ISSN0253-4177
Volume24Issue:7Pages:780-784
Abstract

在不同注 F剂量条件下 ,对 P沟和 N沟两种不同差分对输入 CMOS运放电路的电离辐照响应进行了研究 .分析比较了注 F和未注 F运放电路电离辐照响应之间的差异 .结果表明 ,在栅场介质注入适量的 F,可有效抑制辐照感生的氧化物电荷尤其是界面态的增长 ,从而提高 CMOS运放电路的抗辐照特性 .

Other Abstract

Ionizing radiation effects on fluorinated and no F-implanted CMOS operational amplifiers are investigated,and the difference between the radiation performances is analyzed and compared. The results show that the suit F-implanted can avail-ably control the increase of radiation induced oxide charge especially for interface state so that the capacity of radiation hard-ness is improved.

Keyword注fcmos运算放大器 电离辐照 跨导
Subject AreaEngineering (Provided By Thomson Reuters)
Indexed ByCSCD
CSCD IDCSCD:1199773
Citation statistics
Cited Times:1[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/2123
Collection材料物理与化学研究室
Affiliation中国科学院新疆理化技术研究所; 西安微电子技术研究所
Recommended Citation
GB/T 7714
任迪远,陆妩,余学锋,等. 不同注F剂量与CMOS运放电路辐照损伤的相关性[J]. 半导体学报,2003,24(7):780-784.
APA 任迪远.,陆妩.,余学锋.,郭旗.,张国强.,...&赵文魁.(2003).不同注F剂量与CMOS运放电路辐照损伤的相关性.半导体学报,24(7),780-784.
MLA 任迪远,et al."不同注F剂量与CMOS运放电路辐照损伤的相关性".半导体学报 24.7(2003):780-784.
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