XJIPC OpenIR  > 材料物理与化学研究室
Alternative Titlerelativity of radiation damage in fluorinated cmos operational amplifiers
任迪远; 陆妩; 余学锋; 郭旗; 张国强; 胡浴红; 王明刚; 赵文魁
Source Publication半导体学报

在不同注 F剂量条件下 ,对 P沟和 N沟两种不同差分对输入 CMOS运放电路的电离辐照响应进行了研究 .分析比较了注 F和未注 F运放电路电离辐照响应之间的差异 .结果表明 ,在栅场介质注入适量的 F,可有效抑制辐照感生的氧化物电荷尤其是界面态的增长 ,从而提高 CMOS运放电路的抗辐照特性 .

Other Abstract

Ionizing radiation effects on fluorinated and no F-implanted CMOS operational amplifiers are investigated,and the difference between the radiation performances is analyzed and compared. The results show that the suit F-implanted can avail-ably control the increase of radiation induced oxide charge especially for interface state so that the capacity of radiation hard-ness is improved.

Keyword注fcmos运算放大器 电离辐照 跨导
Subject AreaEngineering (Provided By Thomson Reuters)
Indexed ByCSCD
Citation statistics
Cited Times:1[CSCD]   [CSCD Record]
Document Type期刊论文
Affiliation中国科学院新疆理化技术研究所; 西安微电子技术研究所
Recommended Citation
GB/T 7714
任迪远,陆妩,余学锋,等. 不同注F剂量与CMOS运放电路辐照损伤的相关性[J]. 半导体学报,2003,24(7):780-784.
APA 任迪远.,陆妩.,余学锋.,郭旗.,张国强.,...&赵文魁.(2003).不同注F剂量与CMOS运放电路辐照损伤的相关性.半导体学报,24(7),780-784.
MLA 任迪远,et al."不同注F剂量与CMOS运放电路辐照损伤的相关性".半导体学报 24.7(2003):780-784.
Files in This Item:
File Name/Size DocType Version Access License
不同注F剂量与CMOS运放电路辐照损伤的(171KB)期刊论文作者接受稿开放获取CC BY-NC-SAView Application Full Text
Related Services
Recommend this item
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[任迪远]'s Articles
[陆妩]'s Articles
[余学锋]'s Articles
Baidu academic
Similar articles in Baidu academic
[任迪远]'s Articles
[陆妩]'s Articles
[余学锋]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[任迪远]'s Articles
[陆妩]'s Articles
[余学锋]'s Articles
Terms of Use
No data!
Social Bookmark/Share
File name: 不同注F剂量与CMOS运放电路辐照损伤的相关性.pdf
Format: Adobe PDF
This file does not support browsing at this time
All comments (0)
No comment.

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.