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题名: Hot-carrier injection induced interface states in MOS structure and their annealing characteristics
作者: Yu Xuefeng; Ai Erken; Ren Diyuan; Guo Qi; Zhang Guoqiang; Lu Wu
刊名: He Jishu/Nuclear Techniques
发表日期: 2006
卷: 29, 期:1, 页:19-21
收录类别: EI
摘要: By hot-carrier injecting and room temperature annealing repeatedly, responses of the MOS structure to the hot-carrier injection and annealing characteristics have been studied using the technique of c-v analyses. The mechanism of hot-carrier injection induced damage in the MOS structure has also been investigated in view of generation and annealing of the interface states.
内容类型: 期刊论文
URI标识: http://ir.xjipc.cas.cn/handle/365002/2081
Appears in Collections:材料物理与化学研究室_期刊论文

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作者单位: Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China

Recommended Citation:
Yu Xuefeng,Ai Erken,Ren Diyuan,et al. Hot-carrier injection induced interface states in MOS structure and their annealing characteristics[J]. He Jishu/Nuclear Techniques,2006,29(1):19-21.
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