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Hot-carrier injection induced interface states in MOS structure and their annealing characteristics
Yu Xuefeng; Ai Erken; Ren Diyuan; Guo Qi; Zhang Guoqiang; Lu Wu
2006
发表期刊He Jishu/Nuclear Techniques
ISSN2533219
卷号29期号:1页码:19-21
摘要By hot-carrier injecting and room temperature annealing repeatedly, responses of the MOS structure to the hot-carrier injection and annealing characteristics have been studied using the technique of c-v analyses. The mechanism of hot-carrier injection induced damage in the MOS structure has also been investigated in view of generation and annealing of the interface states.
收录类别EI
文献类型期刊论文
条目标识符http://ir.xjipc.cas.cn/handle/365002/2081
专题材料物理与化学研究室
作者单位Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China
推荐引用方式
GB/T 7714
Yu Xuefeng,Ai Erken,Ren Diyuan,et al. Hot-carrier injection induced interface states in MOS structure and their annealing characteristics[J]. He Jishu/Nuclear Techniques,2006,29(1):19-21.
APA Yu Xuefeng,Ai Erken,Ren Diyuan,Guo Qi,Zhang Guoqiang,&Lu Wu.(2006).Hot-carrier injection induced interface states in MOS structure and their annealing characteristics.He Jishu/Nuclear Techniques,29(1),19-21.
MLA Yu Xuefeng,et al."Hot-carrier injection induced interface states in MOS structure and their annealing characteristics".He Jishu/Nuclear Techniques 29.1(2006):19-21.
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