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Radiation effects of the bipolar linear circuits and devices for high and low dose rate total dose irradiations
Ren Diyuan; Lu Wu; Yu Xuefeng; Guo Qi; Erkin
2006
发表期刊Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics
ISSN10003819
卷号26期号:4页码:471-476
摘要Radiation effects and annealing characteristics have been investigated on different type of domestic and/or imported bipolar operational amplifiers and transistors at five dose rates ranging from 100 to 0.002 rad(Si)/s for the same total doses. The results show that enhanced low-dose-rate sensitivity (ELDRS) exists in both domestic and imported bipolar transistors, and the NPN transistors are more obvious than PNP transistors. ELDRS also exists for the bipolar op-amps. But different from bipolar transistors, some of them show that the lower the radiation dose rate was applied, the less the devices were damaged, and the damage induced by high dose rate irradiation can be eliminated by a long time annealing at room temperature. Possible mechanism for these effects is discussed.
收录类别EI
文献类型期刊论文
条目标识符http://ir.xjipc.cas.cn/handle/365002/2039
专题材料物理与化学研究室
作者单位Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China
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GB/T 7714
Ren Diyuan,Lu Wu,Yu Xuefeng,et al. Radiation effects of the bipolar linear circuits and devices for high and low dose rate total dose irradiations[J]. Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics,2006,26(4):471-476.
APA Ren Diyuan,Lu Wu,Yu Xuefeng,Guo Qi,&Erkin.(2006).Radiation effects of the bipolar linear circuits and devices for high and low dose rate total dose irradiations.Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics,26(4),471-476.
MLA Ren Diyuan,et al."Radiation effects of the bipolar linear circuits and devices for high and low dose rate total dose irradiations".Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics 26.4(2006):471-476.
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