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题名: Radiation effects of the bipolar linear circuits and devices for high and low dose rate total dose irradiations
作者: Ren Diyuan; Lu Wu; Yu Xuefeng; Guo Qi; Erkin
刊名: Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics
发表日期: 2006
卷: 26, 期:4, 页:471-476
收录类别: EI
摘要: Radiation effects and annealing characteristics have been investigated on different type of domestic and/or imported bipolar operational amplifiers and transistors at five dose rates ranging from 100 to 0.002 rad(Si)/s for the same total doses. The results show that enhanced low-dose-rate sensitivity (ELDRS) exists in both domestic and imported bipolar transistors, and the NPN transistors are more obvious than PNP transistors. ELDRS also exists for the bipolar op-amps. But different from bipolar transistors, some of them show that the lower the radiation dose rate was applied, the less the devices were damaged, and the damage induced by high dose rate irradiation can be eliminated by a long time annealing at room temperature. Possible mechanism for these effects is discussed.
内容类型: 期刊论文
URI标识: http://ir.xjipc.cas.cn/handle/365002/2039
Appears in Collections:材料物理与化学研究室_期刊论文

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作者单位: Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China

Recommended Citation:
Ren Diyuan,Lu Wu,Yu Xuefeng,et al. Radiation effects of the bipolar linear circuits and devices for high and low dose rate total dose irradiations[J]. Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics,2006,26(4):471-476.
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文件名: adiation effects of the bipolar linear circuits and devices for high and low dose rate total dose irradiations.pdf
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