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题名: MOSFET's damage induced by hot carrier injection and its annealing
作者: Yu Xuefeng; Erken; Ren Diyuan; Zhang Guoqiang; Lu Wu; Guo Qi
刊名: Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics
发表日期: 2006
卷: 26, 期:4, 页:560-563
收录类别: EI
摘要: Responses of MOSFET's transconductance and threshold voltage to the hot-carrier injection have been studied. The annealing characteristics of hot-carrier injecting induced damage also has been investigated, and from this view, the generation of the oxide charges and interface states have been discussed.
内容类型: 期刊论文
URI标识: http://ir.xjipc.cas.cn/handle/365002/2028
Appears in Collections:材料物理与化学研究室_期刊论文

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MOSFET的热载流子损伤及其退火.pdf(337KB)期刊论文作者接受稿开放获取View 联系获取全文

作者单位: Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China

Recommended Citation:
Yu Xuefeng,Erken,Ren Diyuan,et al. MOSFET's damage induced by hot carrier injection and its annealing[J]. Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics,2006,26(4):560-563.
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文件名: MOSFET的热载流子损伤及其退火.pdf
格式: Adobe PDF
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