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MOSFET's damage induced by hot carrier injection and its annealing
Yu Xuefeng; Erken; Ren Diyuan; Zhang Guoqiang; Lu Wu; Guo Qi
2006
Source PublicationResearch & Progress of Solid State Electronics
ISSN1000-3819
Volume26Issue:4Pages:560-563
Abstract

Responses of MOSFET's transconductance and threshold voltage to the hot-carrier injection have been studied. The annealing characteristics of hot-carrier injecting induced damage also has been investigated, and from this view, the generation of the oxide charges and interface states have been discussed.

Indexed ByEI
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/2028
Collection材料物理与化学研究室
AffiliationXinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China
Recommended Citation
GB/T 7714
Yu Xuefeng,Erken,Ren Diyuan,et al. MOSFET's damage induced by hot carrier injection and its annealing[J]. Research & Progress of Solid State Electronics,2006,26(4):560-563.
APA Yu Xuefeng,Erken,Ren Diyuan,Zhang Guoqiang,Lu Wu,&Guo Qi.(2006).MOSFET's damage induced by hot carrier injection and its annealing.Research & Progress of Solid State Electronics,26(4),560-563.
MLA Yu Xuefeng,et al."MOSFET's damage induced by hot carrier injection and its annealing".Research & Progress of Solid State Electronics 26.4(2006):560-563.
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