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SiGe HBT与Si BJT的60Co射线总剂量辐照效应比较
Alternative Titlecomparison of the effects of total dose gamma irradiation on sige hbt and si bjt
牛振红; 郭旗; 任迪远; 刘月; 高嵩
Source Publication固体电子学研究与进展

研究了国产结构参数近似的SiGe HBT与Si BJT在60γ射线辐照前和不同剂量辐照后性能的变化,并作了比较.辐照后集电极电流Ic变化很小,基极电流Ib明显增大,表明辐照后电流增益的下降主要是由于Ib的退化所导致.当辐照剂量达到10 kGy(Si)时,SiGe HBT和Si BJT的最大电流增益分别下降为77%和55%,表明了SiGe HBT具有比Si BJT更好的抗γ射线辐照性能.对辐射损伤机理进行了探讨.

Other Abstract

The total dose radiation effects on SiGe HBT and Si BJT were studied and then compared. It is shown that Ic changes slightly while Ib increases obviously with the increase of dose. Thus the degradation of β is dominated by the increasing Ib. The SiGe HBT maintained 77% of peak current gain after 10 kGy (Si), while Si BJT degraded to 55% of peak current gain. The results show that SiGe HBT has much better resistance to Gamma irradiation than Si BJT.

KeywordSige异质结双极晶体管 电离辐射 损伤机理
Indexed ByCSCD
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Document Type期刊论文
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GB/T 7714
牛振红,郭旗,任迪远,等. SiGe HBT与Si BJT的60Co射线总剂量辐照效应比较[J]. 固体电子学研究与进展,2007,27(3):317-319,355.
APA 牛振红,郭旗,任迪远,刘月,&高嵩.(2007).SiGe HBT与Si BJT的60Co射线总剂量辐照效应比较.固体电子学研究与进展,27(3),317-319,355.
MLA 牛振红,et al."SiGe HBT与Si BJT的60Co射线总剂量辐照效应比较".固体电子学研究与进展 27.3(2007):317-319,355.
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