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Alternative TitleDevelopment of high-k gate dielectric materials
武德起; 赵红生; 姚金城; 张东炎; 常爱民
Source Publication无机材料学报


Other Abstract

The traditional gate dielectric material of SiO2 can not satisfy the need of the continuous downscaling of CMOS dimensions. High-K gate dielectric materials have attracted extensive research efforts recently and obtained great progress. In this paper, the developments of high gate materials were reviewed. Based on the authors background and research work in the area, the latest achievements of high-K gate dielectric materials on the recrystalization temperature, the low-K interface layer, and the dielectric breakdown and metal gate electrode were introduced in detail.

Keyword高介电栅介质 晶化温度 低介电界面层 金属栅电极
Indexed BySCI ; CSCD
CSCD ID:3388635
Citation statistics
Cited Times:2[WOS]   [WOS Record]     [Related Records in WOS]
Cited Times:2[CSCD]   [CSCD Record]
Document Type期刊论文
Recommended Citation
GB/T 7714
武德起,赵红生,姚金城,等. 高介电栅介质材料研究进展[J]. 无机材料学报,2008,23(5):865-871.
APA 武德起,赵红生,姚金城,张东炎,&常爱民.(2008).高介电栅介质材料研究进展.无机材料学报,23(5),865-871.
MLA 武德起,et al."高介电栅介质材料研究进展".无机材料学报 23.5(2008):865-871.
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