XJIPC OpenIR  > 材料物理与化学研究室
高介电栅介质材料研究进展
Alternative TitleDevelopment of high-k gate dielectric materials
武德起; 赵红生; 姚金城; 张东炎; 常爱民
2008
Source Publication无机材料学报
ISSN1000-324X
Volume23Issue:5Pages:865-871
Abstract

传统的栅介质材料SiO_2不能满足CMOS晶体管尺度进一步缩小的要求,因此高介电栅介质材料在近几年得到了广泛的研究,进展迅速.本文综述了国内外对高介电材料的研究成果,并结合作者的工作介绍了高介电栅介质在晶化温度、低介电界面层、介电击穿和金属栅电极等方面的最新研究进展.

Other Abstract

The traditional gate dielectric material of SiO2 can not satisfy the need of the continuous downscaling of CMOS dimensions. High-K gate dielectric materials have attracted extensive research efforts recently and obtained great progress. In this paper, the developments of high gate materials were reviewed. Based on the authors background and research work in the area, the latest achievements of high-K gate dielectric materials on the recrystalization temperature, the low-K interface layer, and the dielectric breakdown and metal gate electrode were introduced in detail.

Keyword高介电栅介质 晶化温度 低介电界面层 金属栅电极
DOI10.3724/SP.J.1077.2008.00865
Indexed BySCI ; CSCD
CSCD ID:3388635
Citation statistics
Cited Times:2[WOS]   [WOS Record]     [Related Records in WOS]
Cited Times:2[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/1987
Collection材料物理与化学研究室
Affiliation中国科学院新疆理化技术研究所
Recommended Citation
GB/T 7714
武德起,赵红生,姚金城,等. 高介电栅介质材料研究进展[J]. 无机材料学报,2008,23(5):865-871.
APA 武德起,赵红生,姚金城,张东炎,&常爱民.(2008).高介电栅介质材料研究进展.无机材料学报,23(5),865-871.
MLA 武德起,et al."高介电栅介质材料研究进展".无机材料学报 23.5(2008):865-871.
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