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题名: Development of high-k gate dielectric materials
作者: Wu De-Qi; Zhao Hong-Sheng; Yao Jin-Cheng; Zhang Dong-Yan; Chang Ai-Min
关键词: high-K gate dielectrics ; recrystallization temperature ; low-K interface layer ; metal gate electrode
刊名: JOURNAL OF INORGANIC MATERIALS
发表日期: 2008
DOI: 10.3724/SP.J.1077.2008.00865
卷: 23, 期:5, 页:865-871
摘要: 传统的栅介质材料SiO_2不能满足CMOS晶体管尺度进一步缩小的要求,因此高介电栅介质材料在近几年得到了广泛的研究,进展迅速.本文综述了国内外对高介电材料的研究成果,并结合作者的工作介绍了高介电栅介质在晶化温度、低介电界面层、介电击穿和金属栅电极等方面的最新研究进展.
英文摘要: The traditional gate dielectric material of SiO2 can not satisfy the need of the continuous downscaling of CMOS dimensions. High-K gate dielectric materials have attracted extensive research efforts recently and obtained great progress. In this paper, the developments of high gate materials were reviewed. Based on the authors background and research work in the area, the latest achievements of high-K gate dielectric materials on the recrystalization temperature, the low-K interface layer, and the dielectric breakdown and metal gate electrode were introduced in detail.
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内容类型: 期刊论文
URI标识: http://ir.xjipc.cas.cn/handle/365002/1987
Appears in Collections:资源化学研究室_期刊论文

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作者单位: Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China;Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China; Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China

Recommended Citation:
Wu De-Qi,Zhao Hong-Sheng,Yao Jin-Cheng,et al. Development of high-k gate dielectric materials[J]. JOURNAL OF INORGANIC MATERIALS,2008,23(5):865-871.
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