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不同型号的星用Power MOSFET的辐射响应特性
Alternative Titleradiation effects and annealing of various power mosfet applied in satellites
刘刚; 余学锋; 任迪远; 牛振红; 高嵩
Source Publication核电子学与探测技术

利用60Co源对将应用于空间系统的两种Power MOSFET进行了不同总剂量辐照实验,并从微观氧化物陷阱电荷和界面态的辐射感生角度,对比分析了不同型号Power MOSFET器件在60Coγ射线辐射下的总剂量效应以及辐照后100℃下退火特性,并侧重分析了总剂量实验中阈值电压和击穿电压的变化关系。为此类器件在航天系统中的应用提供了辐照数据基础和依据。

Other Abstract

Two kinds of Power MOSFET applied in the space have been irradiated and tested, and from the view of the changes of oxide charges and interface states, their total dose radiation responses and characteristics have been analyzed. And the relations between breakdown voltage and threshold voltage in the experiment of total dose radiation have been investigated and compared. Results of our experiment have provided foundation for the application of these two type devices in spaceflight system.

KeywordPowermosfet 阈值电压 总剂量辐射 击穿电压
Indexed ByCSCD
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Document Type期刊论文
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GB/T 7714
刘刚,余学锋,任迪远,等. 不同型号的星用Power MOSFET的辐射响应特性[J]. 核电子学与探测技术,2007,27(2):347-349,334.
APA 刘刚,余学锋,任迪远,牛振红,&高嵩.(2007).不同型号的星用Power MOSFET的辐射响应特性.核电子学与探测技术,27(2),347-349,334.
MLA 刘刚,et al."不同型号的星用Power MOSFET的辐射响应特性".核电子学与探测技术 27.2(2007):347-349,334.
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