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题名: 一种国产GaInP/GaAs/Ge三结太阳电池的电子辐照特性
其他题名: effects of electron irradiation on a home-made type of triple-junction gainp/gaas/ge solar cell
作者: 牛振红; 郭旗; 任迪远; 刘刚; 高嵩; 肖志斌
关键词: 多结太阳电池 ; GaInP/GaAs/Ge ; 电子辐照 ; 辐照效应 ; 光谱响应
刊名: 核技术
发表日期: 2007
卷: 30, 期:1, 页:37-39
摘要: 对一种国产GalnP/GaAs/Ge三结太阳电池进行了1 MeV电子辐照损伤研究,分析和讨论了不同注量电池电参数和光谱响应的衰降规律。实验结果表明,这种电池不但有很高的初始效率,而且有好的抗辐射性,电子注量达到1×1015cm-2时,最大输出功率为辐照前的80.4%。辐照后GalnP顶电池几乎不发生退化,而GaAs中间电池短路电流严重退化,致使GalnP顶电池与GaAs中间电池电流失配,是GalnP/GaAs/Ge电池性能退化的主要原因。
英文摘要: Radiation effects of 1 MeV electron on a home-made type of triple-junction GaInP/GaAs/Ge solar cell have been investigated. The results indicate that the GaInP/GaAs/Ge solar cell has high efficiency and high radiation hardness. The final-to-initial maximum power ratio (P/P0) of the GaInP/GaAs/Ge cell was 80.4% at a fluence of l × l015 cm-2. The spectral response of the GaInP top subcell showed little degradation, and this was not a limitation for GaInP/GaAs/Ge cell performance. The GaAs middle subcell Isc, however, presented serious degradation. The degradation of GaInP/GaAs/Ge solar cell is due primarily to the GaAs middle subcell.
内容类型: 期刊论文
URI标识: http://ir.xjipc.cas.cn/handle/365002/1965
Appears in Collections:材料物理与化学研究室_期刊论文

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作者单位: 中国科学院新疆理化技术研究所; 天津电源研究所;中国科学院研究生院

Recommended Citation:
牛振红,郭旗,任迪远,等. 一种国产GaInP/GaAs/Ge三结太阳电池的电子辐照特性[J]. 核技术,2007,30(1):37-39.
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文件名: Ge三结太阳电池的电子辐照特性.pdf
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