XJIPC OpenIR  > 材料物理与化学研究室
一种国产GaInP/GaAs/Ge三结太阳电池的电子辐照特性
Alternative Titleeffects of electron irradiation on a home-made type of triple-junction gainp/gaas/ge solar cell
牛振红; 郭旗; 任迪远; 刘刚; 高嵩; 肖志斌
2007
Source Publication核技术
ISSN0253-3219
Volume30Issue:1Pages:37-39
Abstract

对一种国产GalnP/GaAs/Ge三结太阳电池进行了1 MeV电子辐照损伤研究,分析和讨论了不同注量电池电参数和光谱响应的衰降规律。实验结果表明,这种电池不但有很高的初始效率,而且有好的抗辐射性,电子注量达到1×1015cm-2时,最大输出功率为辐照前的80.4%。辐照后GalnP顶电池几乎不发生退化,而GaAs中间电池短路电流严重退化,致使GalnP顶电池与GaAs中间电池电流失配,是GalnP/GaAs/Ge电池性能退化的主要原因。

Other Abstract

Radiation effects of 1 MeV electron on a home-made type of triple-junction GaInP/GaAs/Ge solar cell have been investigated. The results indicate that the GaInP/GaAs/Ge solar cell has high efficiency and high radiation hardness. The final-to-initial maximum power ratio (P/P0) of the GaInP/GaAs/Ge cell was 80.4% at a fluence of l × l015 cm-2. The spectral response of the GaInP top subcell showed little degradation, and this was not a limitation for GaInP/GaAs/Ge cell performance. The GaAs middle subcell Isc, however, presented serious degradation. The degradation of GaInP/GaAs/Ge solar cell is due primarily to the GaAs middle subcell.

Keyword多结太阳电池 Gainp/gaas/ge 电子辐照 辐照效应 光谱响应
Indexed ByCSCD
CSCD IDCSCD:2735276
Citation statistics
Cited Times:4[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/1965
Collection材料物理与化学研究室
Affiliation中国科学院新疆理化技术研究所; 天津电源研究所;中国科学院研究生院
Recommended Citation
GB/T 7714
牛振红,郭旗,任迪远,等. 一种国产GaInP/GaAs/Ge三结太阳电池的电子辐照特性[J]. 核技术,2007,30(1):37-39.
APA 牛振红,郭旗,任迪远,刘刚,高嵩,&肖志斌.(2007).一种国产GaInP/GaAs/Ge三结太阳电池的电子辐照特性.核技术,30(1),37-39.
MLA 牛振红,et al."一种国产GaInP/GaAs/Ge三结太阳电池的电子辐照特性".核技术 30.1(2007):37-39.
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