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Alternative Titlestatistical analysis of threshold voltage changes of cmos devices before and after total dose irradiation
李爱武; 余学峰; 任迪远; 汪东; 匡治兵; 刘刚
Source Publication核技术


Other Abstract

The statistical method has been applied to analyze the data of a large number samples of CMOS CC4069 circuits before and after irradiation. The standard deviation and statistical distribution of the threshold voltage of the transistors before and after irradiation were compared, and the distribution characteristics of the threshold voltage shift of the samples were studied. Furthermore, the necessity of selecting electronic devices, used in spaceflight systems to ensure their reliability, is discussed.

Keyword互补型金属-氧化物-半导体(Cmos)器件 总剂量辐照 阈电压 统计
Indexed ByCSCD
CSCD IDCSCD:0253-3219
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Document Type期刊论文
Recommended Citation
GB/T 7714
李爱武,余学峰,任迪远,等. 总剂量辐照前后CMOS器件阈电压变化的统计分析[J]. 核技术,2006,29(9):665-669.
APA 李爱武,余学峰,任迪远,汪东,匡治兵,&刘刚.(2006).总剂量辐照前后CMOS器件阈电压变化的统计分析.核技术,29(9),665-669.
MLA 李爱武,et al."总剂量辐照前后CMOS器件阈电压变化的统计分析".核技术 29.9(2006):665-669.
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