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SiGe HBT60Coγ射线辐照效应及退火特性
Alternative Titletotal dose gamma irradiation effects and annealing characteristics of a sige hbt
牛振红; 郭旗; 任迪远; 刘刚; 高嵩
2006
Source Publication半导体学报
ISSN0253-4177
Volume27Issue:9Pages:1608-1611
Abstract

研究了国产SiGe异质结双极晶体管(HBT)60Coγ射线100Gy(Si)~10kGy(Si)总剂量辐照后的辐照效应及辐照后的退火特性.测试了辐照及退火后的直流电参数.实验结果显示,辐照后基极电流(Ib)明显增大,而集电极电流(Ic)基本不变,表明Ib的增加是电流增益退化的主要原因.退火结果表现为电流增益(β=Ic/Ib)继续衰降,表明SiGeHBT具有“后损伤”效应.对其机理进行了探讨,结果表明其主要原因是室温退火中界面态继续增长引起的.

Other Abstract

The total-dose radiation effects and annealing characteristics of a SiGe HBT are studied. It is found that the degradation of the current gain is dominated by the increase of Ib. The mechanisms behind the post-damage effects of total-dose radiation are discussed. The chief factor that causes post-damage effects is the increase in the interface states.

KeywordSige异质结双极晶体管 电离辐射 退火 后损伤效应
Indexed ByCSCD
CSCD IDCSCD:2433828
Citation statistics
Cited Times:2[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.xjipc.cas.cn/handle/365002/1942
Collection材料物理与化学研究室
Affiliation中国科学院新疆理化技术研究所;中国科学院研究生院
Recommended Citation
GB/T 7714
牛振红,郭旗,任迪远,等. SiGe HBT60Coγ射线辐照效应及退火特性[J]. 半导体学报,2006,27(9):1608-1611.
APA 牛振红,郭旗,任迪远,刘刚,&高嵩.(2006).SiGe HBT60Coγ射线辐照效应及退火特性.半导体学报,27(9),1608-1611.
MLA 牛振红,et al."SiGe HBT60Coγ射线辐照效应及退火特性".半导体学报 27.9(2006):1608-1611.
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