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题名: 掺锰硅材料的电流振荡特性
其他题名: current oscillation properties of manganese-doped-silicon materials
作者: 陈朝阳; 巴维真; 张建; 丛秀云
关键词: ; 掺杂 ; 补偿 ; 电流振荡
刊名: 半导体学报
发表日期: 2006
卷: 27, 期:9, 页:1582-1585
资助者: 中国科学院“西部之光”;乌鲁木齐市科技攻关计划(批准号:G041202)资助项目
摘要: 用高温扩散方法制备出补偿Si∶(B,Mn)材料,并研究了这种材料的电流振荡参数与光照和电场之间的关系.结果表明在一定光照和电场范围内(276~305V/cm),电阻率为104Ω.cm的材料在液氮温度下显示出电流振荡特性;在一定的电场下,电流振荡波形是固定的,不随时间变化;振荡频率随光照强度的增大而线性增大;调制系数随着光强的增强而减弱;振荡的最大值随着光照强度增大而减小,最小值随着光强增大而缓慢增大.
英文摘要: Compensated material Si:(B, Mn) is prepared by high temperature diffusion. The relation between the current oscillation parameters of this material and light intensity and electric field is studied. The experiment shows that: (1) In certain light intensity and electric field ranges (145-305 V/cm) the material Si:(B, Mn) with a resistivity of 104Ω·cm exhibits a current oscillation phenomenon at liquid nitrogen temperature; (2) At a certain electric field, the waveform of the current oscillation is stable and does not change with time; (3) The dependence relation between the oscillation frequency and light-intensity can be expressed by f = f0 (L/L0) α where L0 is the minimum light-intensity needed to stimulate oscillation, f0 is the frequency under L0, L is the intensity of the light, and α is a coefficient that increase with electric field; (4) The modulating coefficient K (K = (Imax-Imin)/Imax) decreases as the light increases; (5) The maximum value of the oscillation Imax decreases with the increase of the light-intensity while the minimum value of oscillation Imin increases slowly.
内容类型: 期刊论文
URI标识: http://ir.xjipc.cas.cn/handle/365002/1941
Appears in Collections:材料物理与化学研究室_期刊论文

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作者单位: 中国科学院新疆理化技术研究所;乌兹别克斯坦国立技术大学

Recommended Citation:
陈朝阳,巴维真,张建,等. 掺锰硅材料的电流振荡特性[J]. 半导体学报,2006,27(9):1582-1585.
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文件名: 掺锰硅材料的电流振荡特性.pdf
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