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Alternative Titlecurrent oscillation properties of manganese-doped-silicon materials
陈朝阳; 巴维真; 张建; 丛秀云; Bakhadyrkhanov M K; Zikrillaev N F
Source Publication半导体学报


Other Abstract

Compensated material Si:(B, Mn) is prepared by high temperature diffusion. The relation between the current oscillation parameters of this material and light intensity and electric field is studied. The experiment shows that: (1) In certain light intensity and electric field ranges (145-305 V/cm) the material Si:(B, Mn) with a resistivity of 104Ω·cm exhibits a current oscillation phenomenon at liquid nitrogen temperature; (2) At a certain electric field, the waveform of the current oscillation is stable and does not change with time; (3) The dependence relation between the oscillation frequency and light-intensity can be expressed by f = f0 (L/L0) α where L0 is the minimum light-intensity needed to stimulate oscillation, f0 is the frequency under L0, L is the intensity of the light, and α is a coefficient that increase with electric field; (4) The modulating coefficient K (K = (Imax-Imin)/Imax) decreases as the light increases; (5) The maximum value of the oscillation Imax decreases with the increase of the light-intensity while the minimum value of oscillation Imin increases slowly.

Keyword 掺杂 补偿 电流振荡
Indexed ByCSCD
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Cited Times:1[CSCD]   [CSCD Record]
Document Type期刊论文
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GB/T 7714
陈朝阳,巴维真,张建,等. 掺锰硅材料的电流振荡特性[J]. 半导体学报,2006,27(9):1582-1585.
APA 陈朝阳,巴维真,张建,丛秀云,Bakhadyrkhanov M K,&Zikrillaev N F.(2006).掺锰硅材料的电流振荡特性.半导体学报,27(9),1582-1585.
MLA 陈朝阳,et al."掺锰硅材料的电流振荡特性".半导体学报 27.9(2006):1582-1585.
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